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Perovskite materials
Gavranović, Stevan ; Zmeškal, Oldřich (referee) ; Pospíšil, Jan (advisor)
This bachelor´s thesis is focused on a study of electrical properties of perovskite single crystals prepared by inverse temperature crystallization (ITC). Measurements were done on the organic-inorganic halide perovskite monocrystal MAPbBr3 and on the completely inorganic halide perovskite monocrystal CsPbBr3. Crystalline structure and chemical composition of prepared single crystals were determined using x-ray diffraction analysis. Current-voltage characteristics of perovskite monocrystals were measured using solar simulator. Hole carrier mobility were calculated from determined current-voltage characteristics using SCLC method. Furthermore, the dependencies of dielectric permittivity on frequency of alternating current were measured. MAPbBr3 single crystal showed better electrical properties (higher hole carrier mobilities) than CsPbBr3.
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Perovskite materials
Gavranović, Stevan ; Zmeškal, Oldřich (referee) ; Pospíšil, Jan (advisor)
This bachelor´s thesis is focused on a study of electrical properties of perovskite single crystals prepared by inverse temperature crystallization (ITC). Measurements were done on the organic-inorganic halide perovskite monocrystal MAPbBr3 and on the completely inorganic halide perovskite monocrystal CsPbBr3. Crystalline structure and chemical composition of prepared single crystals were determined using x-ray diffraction analysis. Current-voltage characteristics of perovskite monocrystals were measured using solar simulator. Hole carrier mobility were calculated from determined current-voltage characteristics using SCLC method. Furthermore, the dependencies of dielectric permittivity on frequency of alternating current were measured. MAPbBr3 single crystal showed better electrical properties (higher hole carrier mobilities) than CsPbBr3.
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Characterization of rainbowlike hanze on (111) Si wafers
Seďa, Bohuslav ; Englišová, V.
Silicon single crystals used in microelectronic industry are mostly grownin crystalline orientations (111) or (100). These crystals are processed to polished wafers by several technological steps. The first one is their cutting. The crystals in crystalline orientation (111) are usually cut with off-orientation up to 4 degrees of (111) crystalline plane. Only wafers for some special applications are cut with zero off-orientation. A specialoptical feature of polished surface of (111) silicon wafers cut with zerooff-orientation is presentsed in this paper.
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Propustnost podél hranic zrn v dobře definovaných polykrystalických vrstvách silikalitu-1 a v samostatných krystalech
Brabec, Libor ; Zikánová, Arlette ; Kočiřík, Milan
Self-supporting silicalite-1 layers were grown on mercury surface from clear solutions at temperatures 140-180 oC. Large silicalite-1 crystals were synthesized using TPABr as template. Layer morphology and thickness were characterized by SEM. Phase purity of silicalite-1 and orientation of crystals were determined by XRD. Layers with the thickness > 40 .mu.m were found to be highly compact. Wet HF etching of as-synthesized polycrystalline silicalite-1 layers caused formation of deep sharp slits at grain boundaries and thus it visualized them. Contrary to this result etching of calcined layers led to a kind of a negative image represented by preserved thin shells at crystal boundaries which were found to be impregnated by carbon residues formed during template removal. Results of etching experiments give a strong indication of the existence of a thin amorphous silica interface between neighbouring crystals. The etching patterns were somewhat different for large silicalite-1 crystals.
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