Home > Search Results: keywords:"rychlé tepelné žíhání"
Search:
Search Tips :: Advanced Search
Search collections:
Sort by: Display results: Output format:
National Repository of Grey Literature 2 records found  Search took 0.00 seconds. 
Elimination of defects in Si substrates by Rapid Thermal Process application
 Frantík, Ondřej ; Hégr, Ondřej (referee) ; Szendiuch, Ivan (advisor)
Low cost, rapid and high thermal by IR heating, rapid cooling and high efficiency, there are RTP (Rapid Thermal Processing) properties. We can use RTP for annealing, diffusion, contacting, oxidation and others. Rapid temperature change and IR heating can be followed positive effects in the silicon substrate. This paper is focused on annealing by RTP. Wafers were p-type monocrystalline CZ silicon with different bulk minority carrier lifetime. Minority carrier lifetime was measured by MW-PCD (Microwave Photoconductance Decay) before and after thermal processing.
Detailed record
Elimination of defects in Si substrates by Rapid Thermal Process application
 Frantík, Ondřej ; Hégr, Ondřej (referee) ; Szendiuch, Ivan (advisor)
Low cost, rapid and high thermal by IR heating, rapid cooling and high efficiency, there are RTP (Rapid Thermal Processing) properties. We can use RTP for annealing, diffusion, contacting, oxidation and others. Rapid temperature change and IR heating can be followed positive effects in the silicon substrate. This paper is focused on annealing by RTP. Wafers were p-type monocrystalline CZ silicon with different bulk minority carrier lifetime. Minority carrier lifetime was measured by MW-PCD (Microwave Photoconductance Decay) before and after thermal processing.
Detailed record

Interested in being notified about new results for this query?
Subscribe to the RSS feed.
Digital Repository :: Search :: Submit :: Personalize :: Help
Powered by Invenio v1.1.2
Maintained by admin.invenio@techlib.cz
This site is also available in the following languages:
Česky  English