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Analysis of locally modified surfaces for selective growth of cobalt
Krajňák, Tomáš ; Bábor, Petr (referee) ; Čechal, Jan (advisor)
In this thesis the chemical composition of silicon substrates locally modified by focused gallium ion beam by X-ray photoelectron spectroscopy is determined. In order to determine the influence of focused ion beam, the sample comprising sputtered square areas with nominal depths in range of 1 to 10 nm was prepared. Next, the sample was heated to elevated temperatures (500 - 700 °C) to reveal changes in the sputtered areas induced by annealing. In this work by X-ray photoelectron spectrometer Kratos Supra and electron microscope Tescan LYRA3 with focused ion beam were used. From the measured spectra of the Si 2p and Ga 2p3/2 peaks measured as a function of nominal sputtering depth and annealing temperature the following main observations were obtained. First, there is the additional peak component in the Si 2p peak, which can be assigned to the amorphous silicon. The second important finding is that gallium can be removed from near surface volume by annealing at temperatures beyond 700 °C.
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Testing and optimization of an ion source
Glajc, Petr ; Král,, Jaroslav (referee) ; Kolíbal, Miroslav (advisor)
A thorough description of the testing of a saddle-field ion source is presented in the diploma thesis. The most important experimental results, such as Faraday cup measurements of the ion beam current profile and of the ion energy spectra, are included. Based on these results it is shown that the optimized ion source works correctly and according to the expectations. At the end of the thesis, the development of the ion-optical and construction design of the focusing optics is described. The manufactured optics assembly attached to the ion source is also shown.
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Application onf the Focused Ion on Electron Beam in Nanotechnologies
Šamořil, Tomáš ; Mikulík, Petr (referee) ; Jiruše, Jaroslav (referee) ; Šikola, Tomáš (advisor)
Nowadays, the systems that allow simultaneous employment of both focused electron and ion beams are very important tools in the field of micro- and nanotechnology. In addition to imaging and analysis, they can be used for lithography, which is applied for preparation of structures with required shapes and dimensions at the micrometer and nanometer scale. The first part of the thesis deals with one lithographic method – focused electron or ion beam induced deposition, for which a suitable adjustment of exposition parameters is searched and quality of deposited metal structures in terms of shape and elemental composition studied. Subsequently, attention is paid also to other types of lithographic methods (electron or ion beam lithography), which are applied in preparation of etching masks for the subsequent selective wet etching of silicon single crystals. In addition to optimization of mentioned techniques, the application of etched silicon surfaces for, e.g., selective growth of metal structures has been studied. The last part of the thesis is focused on functional properties of selected 2D or 3D structures.
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Design of an ion source for sputtering
Glajc, Petr ; Voborný, Stanislav (referee) ; Kolíbal, Miroslav (advisor)
This bachelor's thesis deals with the development of a new type of an ion source. The aim is to design a saddle-field ion source for sputtering. The unique property of the design is that it combines classical cylindrical-symmetry saddle-field ion source with a hot cathode made of tungsten. In the first part of the thesis an overview of the published research in the field of ion sources is presented. The second part deals with an electrostatic-optical design of the source and with simulations of the electrostatic field including trajectories of electrons and ions. Also a crude estimation of the source parameters is made. In the third part the construction design based on previous simulations is described.
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Analysis of Nanostructures by ToF-LEIS
Duda, Radek ; Král, Jaroslav (referee) ; Mašek, Karel (referee) ; Dub, Petr (advisor)
The presented thesis deals with the utilization of TOF-LEIS analytical method in the area of nanostructure analysis. A new procedure for depth profiling of the elemental composition of the sample, based on the alternate measurement with the DSIMS method, was established. The TOF-LEIS method is able to detect the interface between the layers before its mixing by the ion beam of the DSIMS method. Furthermore, a procedure of TOF-LEIS spektra modification was established to obtain the actual concentration of elements in the sample by reduction of a multiple collision contribution. By comparison of TOF-LEIS spectra with the results received by the DSIMS method the ratio of molybdenum and silicon ion yields was obtained. In the next section advantages of the TOF-LEIS method in combination with XPS during analysis of thermal stability of gold nanoparticles are presented. The mutual complementarity of both methods is shown and final conclusions are supported by electron microscopy images. The final section deals with a newly assembled apparatus for the TOF-SARS analytical method and shows its possibilities regarding the detection of hydrogen on the graphene.
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2D and 3D analysis of semiconductor devices by SIMS
Vařeka, Karel ; Šamořil, Tomáš (referee) ; Bábor, Petr (advisor)
The chemical analysis of semiconductor structures using the SIMS method is the main part of this bachelor thesis. It allows the user to make a depth profiling and a creation of 2D or 3D material images. During the analysis of the chip from the TIGBT semiconductor, there is a sputtering of a heterogeneous structure in the material with different sputtering rates. It is convenient to make a cut through the material using a focused ion beam to create a profile, which grants the user to perform a tomographic measurement. This new surface enables a chemical analysis of a depth profile of semiconductor structures without the need for sputtering beam in dynamic SIMS mode. By reconstructing individual two-dimensional images, it is possible to assemble a three-dimensional pattern of the analysed sample area. Also, the preparation and removal of the lamella from the TIGBT chip were accomplished and analysed via a detector of transmission electrons.
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Fabrication of Nanostructures Using Focused Ion Beam
Bartoš, Radko ; Tomanec, Ondřej (referee) ; Kolíbal, Miroslav (advisor)
This bachelor´s thesis deals with the ion-beam milling. Focused ion beam instrument is presented, as well as possibilities of initial setup conditions, which finally result in different nanostuctures´ shapes. In the thesis the methodology of fabrication and analysis of the nanostructures is described. Ideal ion beam setup conditions were deduced so that the nanostructures are of requested shape.
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Sputtering of dust grains and its consequences for space processes.
Vyšinka, Marek ; Šafránková, Jana (advisor) ; Stöckel, Jan (referee) ; Wild, Jan (referee)
Title: Sputtering of dust grains and its consequences for space processes Author: Marek Vyšinka Department: Department of Surface and Plasma Science Supervisor: prof. RNDr. Jana Šafránková, DrSc., Department of Surface and Plasma Science Abstract: A great part of matter in a space has a form of dust grains, tiny pieces of rocks with the dimensions of hundreds nanometers to hundreds micrometers. In this environment dust grains undergo collisions with energetic particles (electron, ions, UV photons) that leads to their charging and modification. The presented thesis studies ion-dust interactions and is focussed on dust grain modification through ion implantation and its destruction via sputtering process. Two compu- ter models are presented - first for computing the ion implantation profile in the grain and second, for the shape of the sputtered grain lying on the surface of a bigger object. The resulting shape of the grain is compared with that obtained experimentally. Important results of the thesis are measured sputtering yields for spherical SiO2 grains at several surface potentials obtained by simultaneous ion and electron bombardments. Keywords: ions, dust grains, sputtering, sputtering yield, implantation profile 1
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Sputtering of dust grains and its consequences for space processes.
Vyšinka, Marek ; Šafránková, Jana (advisor)
Title: Sputtering of dust grains and its consequences for space processes Author: Marek Vyšinka Department: Department of Surface and Plasma Science Supervisor: prof. RNDr. Jana Šafránková, DrSc., Department of Surface and Plasma Science Abstract: A great part of matter in a space has a form of dust grains, tiny pieces of rocks with the dimensions of hundreds nanometers to hundreds micrometers. In this environment dust grains undergo collisions with energetic particles (electron, ions, UV photons) that leads to their charging and modification. The presented thesis studies ion-dust interactions and is focussed on dust grain modification through ion implantation and its destruction via sputtering process. Two compu- ter models are presented - first for computing the ion implantation profile in the grain and second, for the shape of the sputtered grain lying on the surface of a bigger object. The resulting shape of the grain is compared with that obtained experimentally. Important results of the thesis are measured sputtering yields for spherical SiO2 grains at several surface potentials obtained by simultaneous ion and electron bombardments. Keywords: ions, dust grains, sputtering, sputtering yield, implantation profile 1
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2D and 3D analysis of semiconductor devices by SIMS
Vařeka, Karel ; Šamořil, Tomáš (referee) ; Bábor, Petr (advisor)
The chemical analysis of semiconductor structures using the SIMS method is the main part of this bachelor thesis. It allows the user to make a depth profiling and a creation of 2D or 3D material images. During the analysis of the chip from the TIGBT semiconductor, there is a sputtering of a heterogeneous structure in the material with different sputtering rates. It is convenient to make a cut through the material using a focused ion beam to create a profile, which grants the user to perform a tomographic measurement. This new surface enables a chemical analysis of a depth profile of semiconductor structures without the need for sputtering beam in dynamic SIMS mode. By reconstructing individual two-dimensional images, it is possible to assemble a three-dimensional pattern of the analysed sample area. Also, the preparation and removal of the lamella from the TIGBT chip were accomplished and analysed via a detector of transmission electrons.
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