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High Temperature Processes in Silicon Solar Cells Production
Frantík, Ondřej ; Hudec, Lubomír (referee) ; Banský,, Juraj (referee) ; Szendiuch, Ivan (advisor)
The thesis is focused on high temperature processes in crystalline solar cells production. Main topic is diffusion of traditional dopants phosphorus and boron. Diffusion processes for creating solar cells are different from classical diffusion in semiconductor industrial. It is reason why the thesis describes crated layers in detail. Knowledge of diffusion processes is used for creating bifacial solar cells and development of a new phosphorus emitter for conventional solar cells. Bifacial cells are a new type of cells. Developed new emitter increases efficiency and decreases cost of solar cells production. Another part the thesis is devoted to the prediction of diffusion processes. New models of phosphorus and boron diffusion for photovoltaic industrial are created in software SILVACO. Models correspond with real results.
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Worpllace for dynamic testring of solar cells.
Hanák, Kamil ; Hégr, Ondřej (referee) ; Boušek, Jaroslav (advisor)
This work deals with method for characterization of photovoltaic solar cells based on evaluation of solar cell response to fast transients. The voltage of the cell in both forward and reverse polarisation was controlled by current pulse exciting. Real reverse breakdown voltage and exact value of serial resistance of the cell can be obtained easily by evaluation of the transient curves recorded by digital osciloscope. By negotiation of the time constants of the cell response to excitation in forward polarisation the lifetime of minority carriers in semiconductor bulk can be estimated.
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Elimination of defects in Si substrates by Rapid Thermal Process application
Frantík, Ondřej ; Hégr, Ondřej (referee) ; Szendiuch, Ivan (advisor)
Low cost, rapid and high thermal by IR heating, rapid cooling and high efficiency, there are RTP (Rapid Thermal Processing) properties. We can use RTP for annealing, diffusion, contacting, oxidation and others. Rapid temperature change and IR heating can be followed positive effects in the silicon substrate. This paper is focused on annealing by RTP. Wafers were p-type monocrystalline CZ silicon with different bulk minority carrier lifetime. Minority carrier lifetime was measured by MW-PCD (Microwave Photoconductance Decay) before and after thermal processing.
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Reverse recovery in power integrated circuits
Šuľan, Dušan ; Žák, Jaromír (referee) ; Boušek, Jaroslav (advisor)
Předkládaná práce se zabývá parametrem “Reverse Recovery Time“ u polovodičových prvků a jeho vlivem na typické spínací obvody. V první části práce je objasněno co je “Reverse Recovery Time“ a jeho jednotlivé části. V další sekci je popsána jeho fyzikální podstata. Na konci teoretická části je rozebrán jeho efekt na spínací ztráty a doporučená metoda měření tohto parametru . Praktická část práce je zaměřena na simulace Dpdr45nres45 v prostředích Cadence a TCAD. Poslední část se zabývá návrhem obvodu na měření u reálných diod a samotným měřením diod a tranzistorů.
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High Temperature Processes in Silicon Solar Cells Production
Frantík, Ondřej ; Hudec, Lubomír (referee) ; Banský,, Juraj (referee) ; Szendiuch, Ivan (advisor)
The thesis is focused on high temperature processes in crystalline solar cells production. Main topic is diffusion of traditional dopants phosphorus and boron. Diffusion processes for creating solar cells are different from classical diffusion in semiconductor industrial. It is reason why the thesis describes crated layers in detail. Knowledge of diffusion processes is used for creating bifacial solar cells and development of a new phosphorus emitter for conventional solar cells. Bifacial cells are a new type of cells. Developed new emitter increases efficiency and decreases cost of solar cells production. Another part the thesis is devoted to the prediction of diffusion processes. New models of phosphorus and boron diffusion for photovoltaic industrial are created in software SILVACO. Models correspond with real results.
|
|
|
Elimination of defects in Si substrates by Rapid Thermal Process application
Frantík, Ondřej ; Hégr, Ondřej (referee) ; Szendiuch, Ivan (advisor)
Low cost, rapid and high thermal by IR heating, rapid cooling and high efficiency, there are RTP (Rapid Thermal Processing) properties. We can use RTP for annealing, diffusion, contacting, oxidation and others. Rapid temperature change and IR heating can be followed positive effects in the silicon substrate. This paper is focused on annealing by RTP. Wafers were p-type monocrystalline CZ silicon with different bulk minority carrier lifetime. Minority carrier lifetime was measured by MW-PCD (Microwave Photoconductance Decay) before and after thermal processing.
|
|
|
Worpllace for dynamic testring of solar cells.
Hanák, Kamil ; Hégr, Ondřej (referee) ; Boušek, Jaroslav (advisor)
This work deals with method for characterization of photovoltaic solar cells based on evaluation of solar cell response to fast transients. The voltage of the cell in both forward and reverse polarisation was controlled by current pulse exciting. Real reverse breakdown voltage and exact value of serial resistance of the cell can be obtained easily by evaluation of the transient curves recorded by digital osciloscope. By negotiation of the time constants of the cell response to excitation in forward polarisation the lifetime of minority carriers in semiconductor bulk can be estimated.
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