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National Repository of Grey Literature 2 records found  Search took 0.00 seconds. 
Mapping of dopants in silicon by injection of electrons
 Hovorka, Miloš ; Konvalina, Ivo ; Frank, Luděk
We have focused on planar p-type structures of various dopant densities, embedded In an n-type substrate. The samples were observed in UHV electron microscope with the cathode lens. Imaging by means of secondary electrons and its quantifiability was verified and the method was extended to very low energies.
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Mapping of dopants by electron injection
 Hovorka, Miloš ; Konvalina, Ivo ; Frank, Luděk
Dopants in silicon structures locally modify the secondary electron emission, revealing in this way their distribution over the sample. Primary electron beam with energy around 1 keV is usually used for probing the doped structures. However, very low landing energy range has proved itself an efficient tool for mapping dopants in semiconductors.
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