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Selective hydrogenation of graphene prepared by chemical vapour deposition
Kovařík, Štěpán ; Nováček, Zdeněk (referee) ; Bartošík, Miroslav (advisor)
Controlled bandgap opening is one of the skills necessary for the application of graphene in electronics. The graphene hydrogenation is one of the possible ways to open the bandgap. In this work we deal with local hydrogenation of graphene prepared by chemical vapour deposition on a Si/SiO2 substrate. The hydrogenation was performed by atomic source of hydrogen and polymethyl methacrylate pattern was used for localization of hydrogenated structures on graphene. The pattern was prepared by electron beam lithography. The presence of structures formed by hydrogenated graphene was investigated by Raman spectroscopy, Kelvin probe force microscopy and PeakForce tunneling atomic force microscopy. All three methods have confirmed the local hydrogenation of graphene.
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The hydrogen modification of the graphene structures for field effect transistors
Kurfürstová, Markéta ; Čermák,, Jan (referee) ; Mach, Jindřich (advisor)
This master’s thesis is focused on the subject of graphene modified with atomic hydrogen and its electronic transport properties. Structural and electronic properties of graphene and hydrogenated graphene are compared in the theoretical part of the thesis. The Raman spectroscopy technique is described, including characterization of typical Raman spectra of both unmodified and modified graphene. Samples used during experimental part of the thesis are prepared via laser and electron lithography, and are set to be measured in a vacuum chamber. Subsequently, electronic transport properties are measured before and after hydrogen modification of graphene. Finally, hydrogenated graphene is irradiated using electron beam and changes in its structure are analyzed with Raman spectroscopy techniques.
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Selective hydrogenation of graphene prepared by chemical vapour deposition
Kovařík, Štěpán ; Nováček, Zdeněk (referee) ; Bartošík, Miroslav (advisor)
Controlled bandgap opening is one of the skills necessary for the application of graphene in electronics. The graphene hydrogenation is one of the possible ways to open the bandgap. In this work we deal with local hydrogenation of graphene prepared by chemical vapour deposition on a Si/SiO2 substrate. The hydrogenation was performed by atomic source of hydrogen and polymethyl methacrylate pattern was used for localization of hydrogenated structures on graphene. The pattern was prepared by electron beam lithography. The presence of structures formed by hydrogenated graphene was investigated by Raman spectroscopy, Kelvin probe force microscopy and PeakForce tunneling atomic force microscopy. All three methods have confirmed the local hydrogenation of graphene.
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|
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The hydrogen modification of the graphene structures for field effect transistors
Kurfürstová, Markéta ; Čermák,, Jan (referee) ; Mach, Jindřich (advisor)
This master’s thesis is focused on the subject of graphene modified with atomic hydrogen and its electronic transport properties. Structural and electronic properties of graphene and hydrogenated graphene are compared in the theoretical part of the thesis. The Raman spectroscopy technique is described, including characterization of typical Raman spectra of both unmodified and modified graphene. Samples used during experimental part of the thesis are prepared via laser and electron lithography, and are set to be measured in a vacuum chamber. Subsequently, electronic transport properties are measured before and after hydrogen modification of graphene. Finally, hydrogenated graphene is irradiated using electron beam and changes in its structure are analyzed with Raman spectroscopy techniques.
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