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Transport properties of single graphene domains
Vysocký, Filip ; Kormoš, Lukáš (referee) ; Procházka, Pavel (advisor)
This bachelor thesis is focused on the preparation of single graphene domains by chemical vapor deposition method, its transfer onto non-conductive substrates and subsequent fabrication of the grapehene field effect transistors. The theoretical part of the tesis deals predominantly with different procedures of graphene production. The practical part of the thesis describes the production of graphene field effect transistors by electron beam lithography and the measurement of their transport properties.
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Transport Properties of Graphene Layers during Their Transfer
Gryga, Michal ; Lišková, Zuzana (referee) ; Procházka, Pavel (advisor)
This bachelor thesis is focused on the measurement of the transport properties of graphene, which was produced by chemical vapor deposition (CVD) method on a copper foil and subsequently transferred onto a silicon substrate covered by 280 nm of silicon dioxide. In this work we studied an influence of different types of copper etchants and influence of plasma cleaning of silicon substrates prior to the graphene deposition.
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Transport properties of single graphene domains
Vysocký, Filip ; Kormoš, Lukáš (referee) ; Procházka, Pavel (advisor)
This bachelor thesis is focused on the preparation of single graphene domains by chemical vapor deposition method, its transfer onto non-conductive substrates and subsequent fabrication of the grapehene field effect transistors. The theoretical part of the tesis deals predominantly with different procedures of graphene production. The practical part of the thesis describes the production of graphene field effect transistors by electron beam lithography and the measurement of their transport properties.
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Transport Properties of Graphene Layers during Their Transfer
Gryga, Michal ; Lišková, Zuzana (referee) ; Procházka, Pavel (advisor)
This bachelor thesis is focused on the measurement of the transport properties of graphene, which was produced by chemical vapor deposition (CVD) method on a copper foil and subsequently transferred onto a silicon substrate covered by 280 nm of silicon dioxide. In this work we studied an influence of different types of copper etchants and influence of plasma cleaning of silicon substrates prior to the graphene deposition.
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