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Optimization of devices for deposition GaN nanostructures
Šimek, Daniel ; Voborný, Stanislav (referee) ; Mach, Jindřich (advisor)
This bachelor thesis deals with the automation of sources for the deposition of GaN nanocrystals used at the Institute of Physical Engineering. For the purpose of the thesis, the mechanism of automatic control of the gallium effusion cell shutter was designed and constructed and the control electronics containing components enabling automatic switching of the ion atomic source of nitrogen ions. In addition, samples of GaN nanocrystals on four different substrates that were studied for cold electron emission were prepared by the method of ion beam assisted molecular beam epitaxy IBA-MBE. The results of the measurement are discussed in the conclusion.
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Optimization of device for measurement field emission from GaN nanocrystals surface
Horák, Stanislav ; Kromka, Alexander (referee) ; Mach, Jindřich (advisor)
This diploma thesis deals with the design and optimization of the device for measurement of field emission from gallium nitride (GaN) nanocrystals surface. The first part of the thesis is the topic review, which contains the introduction to the problematics of field emissio focused on GaN. Then there were designed, constructed and optimized two versions of the device for the measurement of field emission. Through the optimization phase, the first successful test has been performed with zinc oxide (ZnO) nanowires. Simultaneously GaN nanocrystals were fabricated on the silicon substrate Si(111) with 2 nm of silicon dioxide SiO2 and also on the copper foil covered by graphene by molecular beam epitaxy (MBE). In the last chapter, there are presented the results of the measurement for emission of GaN nanocrystals. Finally, this study is comparing results with the current research in the area of field emission, which displays the improved characteristics for field emission of GaN nanocrystals on the copper foil covered by graphene.
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Optimization of devices for deposition GaN nanostructures
Šimek, Daniel ; Voborný, Stanislav (referee) ; Mach, Jindřich (advisor)
This bachelor thesis deals with the automation of sources for the deposition of GaN nanocrystals used at the Institute of Physical Engineering. For the purpose of the thesis, the mechanism of automatic control of the gallium effusion cell shutter was designed and constructed and the control electronics containing components enabling automatic switching of the ion atomic source of nitrogen ions. In addition, samples of GaN nanocrystals on four different substrates that were studied for cold electron emission were prepared by the method of ion beam assisted molecular beam epitaxy IBA-MBE. The results of the measurement are discussed in the conclusion.
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Optimization of device for measurement field emission from GaN nanocrystals surface
Horák, Stanislav ; Kromka, Alexander (referee) ; Mach, Jindřich (advisor)
This diploma thesis deals with the design and optimization of the device for measurement of field emission from gallium nitride (GaN) nanocrystals surface. The first part of the thesis is the topic review, which contains the introduction to the problematics of field emissio focused on GaN. Then there were designed, constructed and optimized two versions of the device for the measurement of field emission. Through the optimization phase, the first successful test has been performed with zinc oxide (ZnO) nanowires. Simultaneously GaN nanocrystals were fabricated on the silicon substrate Si(111) with 2 nm of silicon dioxide SiO2 and also on the copper foil covered by graphene by molecular beam epitaxy (MBE). In the last chapter, there are presented the results of the measurement for emission of GaN nanocrystals. Finally, this study is comparing results with the current research in the area of field emission, which displays the improved characteristics for field emission of GaN nanocrystals on the copper foil covered by graphene.
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