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National Repository of Grey Literature 1 records found  Search took 0.01 seconds. 
Mapping of dopants in silicon by electron injection
 Hovorka, Miloš ; Konvalina, Ivo ; Frank, Luděk ; Mikulík, P.
Dopants in sillicon based structures locally modifty the secondary electron emission, revealing in this way their distribution over the sample. For probing the doped structures usually the elctron beam is used at energies around 1keV. However, the very low landing energy range has proven itself an effecient tool for mapping dopant in semiconductors.
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