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Semiconductors structures , charge collection method
Golda, Martin ; Čudek, Pavel (referee) ; Špinka, Jiří (advisor)
This thesis treats about semiconducting silicon structures. It describes the characteristics of the element and creation of P and N type of semiconductor and discusses about different types of faults in the crystal lattice. It deals with the description of methods for monitoring faults in semiconductor ie. determining the properties of semiconductors via EBIC, EBIV and CC methods, which are used for analysis of semiconductor devices and materials. Determining the properties of silicon components is being done by generation of charge carriers in the sample loaded in chamber of the scanning electron microscope by high energy electrons. Bellow the sample surface is being generated an electric charge which is being collected by probes. Using this data obtained by EBIC and CC were evaluated diffusion length and lifetime of electrons.
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Semiconductors structures , charge collection method
Golda, Martin ; Čudek, Pavel (referee) ; Špinka, Jiří (advisor)
This thesis treats about semiconducting silicon structures. It describes the characteristics of the element and creation of P and N type of semiconductor and discusses about different types of faults in the crystal lattice. It deals with the description of methods for monitoring faults in semiconductor ie. determining the properties of semiconductors via EBIC, EBIV and CC methods, which are used for analysis of semiconductor devices and materials. Determining the properties of silicon components is being done by generation of charge carriers in the sample loaded in chamber of the scanning electron microscope by high energy electrons. Bellow the sample surface is being generated an electric charge which is being collected by probes. Using this data obtained by EBIC and CC were evaluated diffusion length and lifetime of electrons.
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Fatigue crack initiation in fcc crystals
Lukáš, Petr ; Kunz, Ludvík
Initiation of fatigue cracks both in model fcc single crystals and in fcc single crystals used in engineering practice is discussed. The emphasis is placed on the role of different types of cyclic slip localisation. It is shown that the phenomenon of persistent slip bands (PSBs) is confined to single crystals of sufficiently high stacking fault energy cycled at a relatively narrow range of loading conditions. For single crystals of not suitable orientations and/or of low stacking fault energy cycled under stresses and/or strains outside the critical range and/or under high temperatures the cyclic plasticity manifests itself by other forms of slip activity leading to the formation of surface hill-valley topography.
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