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Study of low-temperature plasma products using mass spectrometry and their relation to thin film chemistry
Maršálek, Blahoslav ; Bránecký, Martin (referee) ; Čech, Vladimír (advisor)
The aim of this thesis was to analyse and interpret the spectra of tetravinylsilane as a function of plasma discharge power in order to find a relationship between plasma products, layer deposition and thin film chemistry. Another objective was to carry out a literature search in the field of plasma-enhanced chemical vapour deposition (PECVD) and mass spectrometry. Low temperature organosilicate-based plasma technology enables the synthesis of specific materials with controlled chemical and physical properties. The targeted synthesis of surfaces with controlled properties is determined by the atomic and molecular processes in the plasma, which are responsible for building the chemical structure and the resulting material in the form of a thin film. In this work, mass spectrometry has been used to detect and quantify the particles produced in the PECVD process, which is one of the methods that allow the characterization and identification of plasma products. Analysis of the mass spectra revealed that the molecules responsible for the growth of the layer contain carbon and silicon. The deposition rate determined by in situ spectroscopic ellipsometry correlates quantitatively with the flux of carbon and silicon particles that are chemisorbed on the film surface. The ratio of carbon and silicon deposited on the surface also correlates strongly with the C/Si flux ratio of the power driven plasmas. The contribution of silicon-containing particles as building blocks to the film growth decreases with increasing power and accounts for 20% (2 W), 5% (10 W) and only 1% (75 W) of the total chemisorbed fraction. This ratio between bound silicon containing particles and carbon particles affects the elemental composition and chemical structure of the deposited layers. The relationships between plasmachemical processes and particle adhesion on the surface are quite complex. The adhesion of silicon particles first increases sharply to a maximum at 25 W and then gradually decreases, which is characteristic of the so-called precursor-deficient PECVD. Similarly, the concentration of vinyl groups incorporated into the deposited layer and the fraction of sp2 hybridization of carbon correlate with the particle fluxes of the corresponding plasma. This work has demonstrated that mass spectroscopy is a suitable method for the study of plasmachemical deposition from the gas phase (PECVD). PECVD technology is promising for the deposition of silicon-containing layers, which is technologically applicable in many directions of materials research.
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Study of low-temperature plasma products using mass spectrometry and their relation to thin film chemistry
Maršálek, Blahoslav ; Bránecký, Martin (referee) ; Čech, Vladimír (advisor)
The aim of this thesis was to analyse and interpret the spectra of tetravinylsilane as a function of plasma discharge power in order to find a relationship between plasma products, layer deposition and thin film chemistry. Another objective was to carry out a literature search in the field of plasma-enhanced chemical vapour deposition (PECVD) and mass spectrometry. Low temperature organosilicate-based plasma technology enables the synthesis of specific materials with controlled chemical and physical properties. The targeted synthesis of surfaces with controlled properties is determined by the atomic and molecular processes in the plasma, which are responsible for building the chemical structure and the resulting material in the form of a thin film. In this work, mass spectrometry has been used to detect and quantify the particles produced in the PECVD process, which is one of the methods that allow the characterization and identification of plasma products. Analysis of the mass spectra revealed that the molecules responsible for the growth of the layer contain carbon and silicon. The deposition rate determined by in situ spectroscopic ellipsometry correlates quantitatively with the flux of carbon and silicon particles that are chemisorbed on the film surface. The ratio of carbon and silicon deposited on the surface also correlates strongly with the C/Si flux ratio of the power driven plasmas. The contribution of silicon-containing particles as building blocks to the film growth decreases with increasing power and accounts for 20% (2 W), 5% (10 W) and only 1% (75 W) of the total chemisorbed fraction. This ratio between bound silicon containing particles and carbon particles affects the elemental composition and chemical structure of the deposited layers. The relationships between plasmachemical processes and particle adhesion on the surface are quite complex. The adhesion of silicon particles first increases sharply to a maximum at 25 W and then gradually decreases, which is characteristic of the so-called precursor-deficient PECVD. Similarly, the concentration of vinyl groups incorporated into the deposited layer and the fraction of sp2 hybridization of carbon correlate with the particle fluxes of the corresponding plasma. This work has demonstrated that mass spectroscopy is a suitable method for the study of plasmachemical deposition from the gas phase (PECVD). PECVD technology is promising for the deposition of silicon-containing layers, which is technologically applicable in many directions of materials research.
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