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National Repository of Grey Literature 2 records found  Search took 0.00 seconds. 
Study of the dielectric properties of perovskite crystals
 Mlčkovová, Hana ; Pospíšil, Jan (referee) ; Zmeškal, Oldřich (advisor)
The presented diploma thesis deals with the preparation of perovskite single crystals by inverse thermal crystallization and subsequent study of the basic properties of these hybrid organic-inorganic materials that can be used in various optoelectronic (photodetectors, transistors, lasers, LEDs) or photovoltaic applications. Their behavior in the electric field was studied by impedance spectroscopy. Impedance and capacitance-voltage (C-V) characteristics (frequency dependences) were measured in the dark and in the light. From the impedance dependences for measurements at 0 V voltage in the dark, the equivalent circuit was modeled and its parameters and dielectric constant were determined. From the C-V dependence, Mott-Schottky analysis determined the parameters – "flat-band" potential U_"fb" and charge carrier density N_"C-V" , the parameter – the so-called Warburg coefficient was found, which together with the parameter N_"C-V" was used to calculate the diffusion coefficient D.
Detailed record
Study of the dielectric properties of perovskite crystals
 Mlčkovová, Hana ; Pospíšil, Jan (referee) ; Zmeškal, Oldřich (advisor)
The presented diploma thesis deals with the preparation of perovskite single crystals by inverse thermal crystallization and subsequent study of the basic properties of these hybrid organic-inorganic materials that can be used in various optoelectronic (photodetectors, transistors, lasers, LEDs) or photovoltaic applications. Their behavior in the electric field was studied by impedance spectroscopy. Impedance and capacitance-voltage (C-V) characteristics (frequency dependences) were measured in the dark and in the light. From the impedance dependences for measurements at 0 V voltage in the dark, the equivalent circuit was modeled and its parameters and dielectric constant were determined. From the C-V dependence, Mott-Schottky analysis determined the parameters – "flat-band" potential U_"fb" and charge carrier density N_"C-V" , the parameter – the so-called Warburg coefficient was found, which together with the parameter N_"C-V" was used to calculate the diffusion coefficient D.
Detailed record

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