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Monitoring of the plasmachemical process using mass spectrometry
Ondra, Zdeněk ; Čáslavský, Josef (referee) ; Čech, Vladimír (advisor)
This bachelor thesis deals with plasma-enhanced chemical vapor deposition (PECVD) and the use of mass spectrometry to monitor the processes in plasma during the deposition of thin film. Tetravinylsilane plasma was used in the process of forming a thin film on the silicon wafer. The background of the spectrometer, the residual gases in the plasma reactor at basic pressure were characterized and the plasma polymerization process was monitored. This process was monitored with increasing effective power (2-150 W). The obtained mass spectra were assigned and described in detail. The plasma species that showed the greatest change were then characterized as a function of time during film deposition.
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Organosilicon plasma investigated by mass spectrometry
Moravanský, Martin ; Bránecký, Martin (referee) ; Čech, Vladimír (advisor)
This bachelor thesis deals with plasma-enhanced chemical vapor deposition (PECVD) and the use of mass spectrometry to monitor the processes in plasma during the deposition of thin film. Tetravinylsilane plasma was used in the process of forming a thin film on the silicon wafer. The background of the spectrometer, the residual gases in the plasma reactor at basic pressure were characterized and the plasma polymerization process was monitored. This process was monitored with increasing effective power (2-150 W). The obtained mass spectra were assigned and described in detail.
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Organosilicon plasma investigated by mass spectrometry
Moravanský, Martin ; Bránecký, Martin (referee) ; Čech, Vladimír (advisor)
This bachelor thesis deals with plasma-enhanced chemical vapor deposition (PECVD) and the use of mass spectrometry to monitor the processes in plasma during the deposition of thin film. Tetravinylsilane plasma was used in the process of forming a thin film on the silicon wafer. The background of the spectrometer, the residual gases in the plasma reactor at basic pressure were characterized and the plasma polymerization process was monitored. This process was monitored with increasing effective power (2-150 W). The obtained mass spectra were assigned and described in detail.
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Monitoring of the plasmachemical process using mass spectrometry
Ondra, Zdeněk ; Čáslavský, Josef (referee) ; Čech, Vladimír (advisor)
This bachelor thesis deals with plasma-enhanced chemical vapor deposition (PECVD) and the use of mass spectrometry to monitor the processes in plasma during the deposition of thin film. Tetravinylsilane plasma was used in the process of forming a thin film on the silicon wafer. The background of the spectrometer, the residual gases in the plasma reactor at basic pressure were characterized and the plasma polymerization process was monitored. This process was monitored with increasing effective power (2-150 W). The obtained mass spectra were assigned and described in detail. The plasma species that showed the greatest change were then characterized as a function of time during film deposition.
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