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Evaluation of Different Dielectrics For Mid-Infrared Waveguides
 Konečný, Aleš ; Arregi Uribeetxebarria, Jon Ander (oponent) ; Detz, Hermann (vedoucí práce)
The utilization of plasmon polariton waveguides for mid-infrared light has proven its suitability for sensor applications. The waveguide can be surrounded by a gaseous or liquid phase medium, which contains an analyte substance of which the concentration can be measured. The electromagnetic field propagates along the waveguide, which has to satisfy low losses and sufficient interaction conditions. These are fulfilled using a thin dielectric layer applied on a metal surface. This thesis is focused on Si-based dielectrics. Within this work, multilayer waveguides were fabricated by high vacuum magnetron sputtering, plasma-enhanced vapor deposition and photolithography. The deposition was carried out on commonly used Si substrates and is ready to be transfered to InP-based chips. Evaluation of dielectric layers and fabrication methods are based on ellipsometric measurements of refractive index and extinction coefficient in the infrared spectrum.
Úplný záznam
Evaluation of Different Dielectrics For Mid-Infrared Waveguides
 Konečný, Aleš ; Arregi Uribeetxebarria, Jon Ander (oponent) ; Detz, Hermann (vedoucí práce)
The utilization of plasmon polariton waveguides for mid-infrared light has proven its suitability for sensor applications. The waveguide can be surrounded by a gaseous or liquid phase medium, which contains an analyte substance of which the concentration can be measured. The electromagnetic field propagates along the waveguide, which has to satisfy low losses and sufficient interaction conditions. These are fulfilled using a thin dielectric layer applied on a metal surface. This thesis is focused on Si-based dielectrics. Within this work, multilayer waveguides were fabricated by high vacuum magnetron sputtering, plasma-enhanced vapor deposition and photolithography. The deposition was carried out on commonly used Si substrates and is ready to be transfered to InP-based chips. Evaluation of dielectric layers and fabrication methods are based on ellipsometric measurements of refractive index and extinction coefficient in the infrared spectrum.
Úplný záznam

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