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Development and fabrication of graphene Hall probes
Supalová, Linda ; Červenka, Jiří (oponent) ; Bartošík, Miroslav (vedoucí práce)
Advances in engineering and technology have created a demand for stable magnetic field detectors that are able to operate over a wide range of temperatures. At present, sensors based on the Hall effect and giant magnetoresistance effect are the most commonly used devices for real-time non-invasive measurement of both static and dynamic magnetic fields. Example applications of Hall effect-based devices include linear magnetic field sensors, gyrators, speed and directional sensors, electrical compasses, and current sensors, in areas ranging from manufacturing, automotive and aerospace to communication systems. However, currently used materials in Hall probes (mainly III-V semiconductors such as InSb or GaAs) struggle with temperature stability. In this study, we address the fabrication of Hall probes based on graphene and their testing at elevated temperatures. We successfully produce graphene Hall probes in a field effect transistor (FET) arrangement using standard fabrication techniques such as lithography and thin layer deposition. The choice of \acs{FET} architecture allows us to take full advantage of the outstanding electronic properties of graphene during testing of the Hall probes from room temperature up to 200°C. Our results reveal that increasing temperature does not cause significant degradation in the performance of graphene Hall probes even at temperatures above 150°C. This work paves the way for future investigations into the behaviour of graphene Hall probes at elevated temperatures, focusing on understanding the external factors that influence and impact the performance of the sensor in ambient conditions.
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Development and fabrication of graphene Hall probes
Supalová, Linda ; Červenka, Jiří (oponent) ; Bartošík, Miroslav (vedoucí práce)
Advances in engineering and technology have created a demand for stable magnetic field detectors that are able to operate over a wide range of temperatures. At present, sensors based on the Hall effect and giant magnetoresistance effect are the most commonly used devices for real-time non-invasive measurement of both static and dynamic magnetic fields. Example applications of Hall effect-based devices include linear magnetic field sensors, gyrators, speed and directional sensors, electrical compasses, and current sensors, in areas ranging from manufacturing, automotive and aerospace to communication systems. However, currently used materials in Hall probes (mainly III-V semiconductors such as InSb or GaAs) struggle with temperature stability. In this study, we address the fabrication of Hall probes based on graphene and their testing at elevated temperatures. We successfully produce graphene Hall probes in a field effect transistor (FET) arrangement using standard fabrication techniques such as lithography and thin layer deposition. The choice of \acs{FET} architecture allows us to take full advantage of the outstanding electronic properties of graphene during testing of the Hall probes from room temperature up to 200°C. Our results reveal that increasing temperature does not cause significant degradation in the performance of graphene Hall probes even at temperatures above 150°C. This work paves the way for future investigations into the behaviour of graphene Hall probes at elevated temperatures, focusing on understanding the external factors that influence and impact the performance of the sensor in ambient conditions.
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