|
|
Infrared magneto-spectroscopy of Bi2Te3 topological insulator
Mohelský, Ivan ; Výborný, Karel (oponent) ; Orlita, Milan (vedoucí práce)
The main goal of this thesis is to characterize the electronic band structure of Bi2Te3 topological insulator, a system that is, in an ideal case, insulating in bulk but conducting via metallic surface states. This material has been extensively studied for more than 60 years, however, its bulk band structure is not yet fully understood, especially the characteristics of the band gap are still a matter of discussion. In this thesis, results of a Landau level spectroscopy in magnetic fields up to 34 T, supplemented by ellipsometry at zero magnetic field, are presented to clarify some of the band gap properties. The observed response is consistent with the picture of a direct-gap semiconductor in which charge carriers closely resemble massive Dirac particles. The fundamental band gap reaches Eg = (175±5) meV at low temperatures, and it is not located on the trigonal axis, thus displaying either six or twelvefold valley degeneracy.
|
|
|
Structural Charachterization Of Aln Thin Films Obtained On Silicon Surface By Pe-Ald
Dallaev, Rashid
The aim of this study is to investigate the hydrogen impregnations in AlN thin films deposited using plasma-enhanced atomic layer deposition technique. As of date, there is an apparent gap in the literature regarding the matter of hydrogen impregnation within the AlN layers. Hydrogen is a frequent contaminant and its content has detrimental effect on the quality of resulted layer, which is why it is relevant to investigate this particular contaminant and try to eliminate or at least minimize its quantity. Within the films hydrogen commonly forms amino or imide types of bonds (–NH2, - NH). There is only a handful of analytical methods enabling the detection of hydrogen. This particular study comprises two of them – Fourier-transform infrared spectroscopy (FTIR) and second ion-mass spectrometry (SIMS). XPS analysis has also been included to examine the surface nature and structural imperfections of the grown layer.
|
|
|
Optical and magneto-optical properties of thin films of topological insulator Bi2Se3
Jambrich, Jakub ; Veis, Martin (vedoucí práce) ; Hamrle, Jaroslav (oponent)
Významným objektom výskumu v oblasti materiálov sa v posledných dvoch desaťročiach stali topologické izolátory. Ich hlavnou výhodou je, že sa na ich povrchu vytvárajú metalické vodivé stavy, v ktorých sa elektróny dokážu pohybovať, akoby ich efektívna hmotnosť bola takmer nulová. Táto vlasnosť má obrovský potenciál na využitie v novej generácii vysokorýchlostnej elektroniky. V tejto práci sa venujeme skúmaniu optických a magnetooptických vlastností topologického izolátoru Bi2Se3, ktoré sú kľúčové pre jeho ďalšie potenciálne využitie. Pomocou merania absorpcie na Landauových hladinách vo vysokom magnetickom poli určíme tvar disperzie elektrónovej štruktúry, ako aj šírku zakázaného pásu. Následne spektroskopickou elipsometriou v rozsahu viditeľného a blízkeho ultrafialového spektra odmeriame energetickú závislosť komplexnej relatívnej permitivity, ktorá je kľúčová pre popis optických vlastností.
|
|
|
Infrared magneto-spectroscopy of Bi2Te3 topological insulator
Mohelský, Ivan ; Výborný, Karel (oponent) ; Orlita, Milan (vedoucí práce)
The main goal of this thesis is to characterize the electronic band structure of Bi2Te3 topological insulator, a system that is, in an ideal case, insulating in bulk but conducting via metallic surface states. This material has been extensively studied for more than 60 years, however, its bulk band structure is not yet fully understood, especially the characteristics of the band gap are still a matter of discussion. In this thesis, results of a Landau level spectroscopy in magnetic fields up to 34 T, supplemented by ellipsometry at zero magnetic field, are presented to clarify some of the band gap properties. The observed response is consistent with the picture of a direct-gap semiconductor in which charge carriers closely resemble massive Dirac particles. The fundamental band gap reaches Eg = (175±5) meV at low temperatures, and it is not located on the trigonal axis, thus displaying either six or twelvefold valley degeneracy.
|
host ::
RSS.