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Alternative approaches for Preparation of AlN Nanolayers by Atomic Layer Deposition
Dallaev, Rashid ; Krčma, František (oponent) ; Kolařík, Vladimír (oponent) ; Sedlák, Petr (vedoucí práce)
Aluminum nitride (AlN) is a promising semi-conductive material with a wide band gap. Thin films of AlN find implementation in a variety of electronic and optoelectronic devices. First and foremost, the aim of the research presented within the scope of this dissertation is to introduce new precursors into ALD process for deposition of AlN thin films. The proposed precursors are superior to traditional ones either in cost-efficiency or reactivity. A part of the dissertation is devoted to enhancement of the understanding of chemical processes which take place during and after deposition. In this regard, a working solution to improving the chemical composition of the resulting films, as well as ameliorating deficiencies, for instance, oxidization, has been proposed. Another important aspect of this study has to do with a thorough analysis of hydrogen phenomenon in AlN ALD thin films. Hydrogen impurities have been investigated with the use of accurate and advanced techniques belonging to ion-beam analysis (IBA) groups.
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Alternative approaches for Preparation of AlN Nanolayers by Atomic Layer Deposition
Dallaev, Rashid ; Krčma, František (oponent) ; Kolařík, Vladimír (oponent) ; Sedlák, Petr (vedoucí práce)
Aluminum nitride (AlN) is a promising semi-conductive material with a wide band gap. Thin films of AlN find implementation in a variety of electronic and optoelectronic devices. First and foremost, the aim of the research presented within the scope of this dissertation is to introduce new precursors into ALD process for deposition of AlN thin films. The proposed precursors are superior to traditional ones either in cost-efficiency or reactivity. A part of the dissertation is devoted to enhancement of the understanding of chemical processes which take place during and after deposition. In this regard, a working solution to improving the chemical composition of the resulting films, as well as ameliorating deficiencies, for instance, oxidization, has been proposed. Another important aspect of this study has to do with a thorough analysis of hydrogen phenomenon in AlN ALD thin films. Hydrogen impurities have been investigated with the use of accurate and advanced techniques belonging to ion-beam analysis (IBA) groups.
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