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Silicon nanocrystals, photonic structures and optical gain
Ondič, Lukáš ; Herynková, Kateřina (advisor) ; Oswald, Jiří (referee) ; Lauret, Jean-Sebastien (referee)
Silicon nanocrystals (SiNCs) of sizes below approximately 5 nm are a material with an efficient room-temperature photoluminescence (PL) and optical gain. Optical gain is a pre- requisite for obtaining stimulated emission from a pumped material, and the achievement of stimulated emission (and lasing) from Si-based nanostructures is of particular interest of the field of silicon photonics. The aim of this work was (i) to investigate fundamental optical properties of SiNCs, (ii) to design and prepare a photonic crystal with enhanced light ex- traction efficiency and (iii) to explore a possibility of enhancing optical gain of light-emitting SiNCs by combining them with a two-dimensional photonic crystal. First, free-standing oxide (SiOx/SiO2)-passivated SiNCs were prepared by electrochemical etching of a Si wafer. Their optical properties were studied by employing time-resolved spectroscopy, also at cryogenic temperatures. The fast blue-green emission band of these SiNCs was linked with the quasi- direct recombination of hot electrons and holes in the vicinity of the Γ-point. Furthermore, the spectral shift of the slow orange-red band (of these SiNCs) as a function of temperature was explained on the basis of an interplay between tensile strain and bulk Si temperature-induced indirect bandgap shift. The...
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Photoluminescence of CdTe crystals
Procházka, Jan
Title: Photoluminescence of CdTe crystals Author: Jan Procházka Department: Institute of Physics of Charles University in Prague Supervisor: Doc. RNDr. Pavel Hlídek, CSc. Abstract: Energy levels connected with defects in nominally undoped crystals CdTe, indium-doped crystals and chlorine-doped crystals were studied using low- temperature photoluminescence. The crystals are intended for X- and gamma- ray detectors operated at room temperature. An effect of annealing in cadmium or tellurium vapor on luminescence spectra was investigated. Some changes were interpreted by filling of vacancies not only by atoms coming from gaseous phase but also by impurities from defects like interstitials, precipitates, inclusions, grain boundaries etc. The luminescence bands assigned to defects important for compensation mechanism were examined, namely A-centers (complexes of vacancy in cadmium sublattice and impurity shallow donor) and complexes of two donors bound to a vacancy. It was shown, that temperature dependence of the luminescence bands results from more complicated processes than a simple thermal escape of bound excitons or thermal excitation of electrons (holes) from defects to bands. We observed expressive "selective pair luminescence" bands (SPL) on partially compensated In-doped samples during sub-gap...
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Recombination centers in semiinsulating CdTe
Zázvorka, Jakub
Title: Recombination centers in semiinsulating CdTe Author: Jakub Zázvorka Department / Institute: Institute of Physics of Charles University Supervisor of the master thesis: prof. Ing. Jan Franc, DrSc., Institute of Physics of Charles University Abstract: The properties of CdTe for application as a radiation detector are influenced through the presence of deep levels in the bang gap. These energy levels complicate the charge collection and the detector efficiency. Contactless resistivity mapping (COREMA) represents a good option for material characterization without the necessity of metal contacts application. The time-dependent charge measurement was investigated on an adjusted apparatus in FMF Freiburg. Theoretical model of charge transport based on band bending on the sample surface was proposed and a non-exponential behavior was calculated. Using this, the resulted parameter tendencies and their connection with deep level trap or recombination center were explained. A correlation was observed between resistivity, photoconductivity and a near midgap level photoluminescence. Parameter profiles were explained using the theory of Fermi level shift relative to the near midgap level. Three deep levels were observed on samples grown at the Charles University in Prague. Their photoluminescence supports the...
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Morfology and surface chemical composition of porous silicon prepared at various conditions
Konečný, Martin ; Dian, Juraj (advisor) ; Herynková, Kateřina (referee)
Title: Morfology and surface chemical composition of porous silicon prepared at various conditions Author: Bc. Martin KONEČNÝ Author's e-mail: konecmar@seznam.cz Department: Department of Chemical Physics and Optics Supervisor: Doc. RNDr. Juraj Dian, CSc. Supervisor's e-mail: Juraj.Dian@mff.cuni.cz Abstract: Porous silicon is a silicon-based material prepared mainly by anodic etching of crystalline silicon in hydrofluoric acid. Physical and chemical properties of porous silicon are governed by structures with sizes of the order of ones to tens of nanometers. Properties of nanostructure material are affected - as compared to macroscopic counterparts - by quantum confinement effect and enormous internal surface. According to type of silicon substrate (type of dopant, conductivity, crystallographic orientation) and technological conditions a material with different mean size of pores (macro-, meso- and nanoporous silicon) and surface chemical composition (different ratio of Si-O and Si-H bond) can be prepared. Morphology and surface chemical composition predestinated application potential of porous silicon for sensors of chemical species by taking advantage of strong sensitivity of physical properties of silicon nanocrystals - especially of photoluminescence - on the chemical state of a surface. Detection of...
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Luminescence of semiconductors studied by scanning near-field optical microscopy
Těšík, Jan ; Klapetek, Petr (referee) ; Křápek, Vlastimil (advisor)
This work is focused on the study of luminescence of atomic thin layers of transition metal chalkogenides (eg. MoS2). In the experimental part, the work deals with the preparation of atomic thin layers of semiconducting chalcogenides and the subsequent manufacturing of plasmonic interference structures around these layers. The illumination of the interference structure will create a standing plasmonic wave that will excite the photoluminescence of the semiconductor. Photoluminescence was studied both by far-field spectroscopy and near-field optical microscopy.
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Scanning Near-field Optical Microscopy (SNOM)
Majerová, Irena ; Kvapil, Michal (referee) ; Dvořák, Petr (advisor)
A study of the optical properties of 2D materials has recently been the focus of the broad scientific community for its possible applications in nanophotonics and plasmonics. This bachelor thesis deals with the detection of photoluminiscence (PL) of 2D material (MoS2) by means of near-field scanning optical microscopy (SNOM). This PL is excited in the far-field by means of a focused green laser and in the near-field by surface plasmon polariton (SPP) interference. MoS2 flake monolayers are prepared using micromechanical exfoliation on various functional substrates (metal and dielectric). Characterization and quality of MoS2 monolayers is controlled using Raman optical spectroscopy. Furthermore, the experimentally obtained optical spectra of PL MoS2 are compared in a far-field using confocal optical microscopy and in the near-field using SNOM device, where in the near-field is observed a 3 times higher intensity PL of this 2D material than in the far-field
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Defects limiting charge collection in semiinsulated CdZnTe
Zajac, Vít ; Franc, Jan (advisor) ; Šikula, Josef (referee)
Title: Defects limiting charge collection in semiinsulated CdZnTe Author: Vít Zajac Department: Institute of Physics of Charles University Supervisor: doc. Ing. Jan Franc, DrSc., Institute of Physics of Charles University Abstract: We achieved to detect photoluminescence transitions deep in the band gap in 4 samples cut from 2 different crystals of semiinsulating Cd1-xZnxTe (x = 0,02 - 0,18) in a row of points along the growth axis. The spectral peaks give evidence of the presence of deep levels in the sample and the intensity of the photoluminescence peaks is to a certain extent proportional to the concentration of these levels. A comparison between resistivity and photoconductivity that were measured by a contact-less method showed that the change of photoluminescence intensity of deep levels does not bring about an unambigous change of neither resistivity nor photoconductivity. Correlation analysis of resistivity and photoconductivity of 6 samples from 4 different crystals confirmed the following model: A shift of the Fermi level within the band gap induced by a change of donor-acceptor compensation is accompanied by an unambigous change of resistivity and results in a change in occupation of the deep levels. This causes a change in the photoconductivity of the crystal because the occupation factor of...
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Time-resolved measurement of optical gain in silicon based nanostructures
Ondič, Lukáš
2 Title: Time-resolved measurement of optical gain in silicon based nanostructures Author: Bc. Lukáš Ondič Department: Department of Chemical Physics and Optics Supervisor: Prof. RNDr. Ivan Pelant, DrSc., Institute of Physics, Academy of Sci- ences of the Czech Republic Supervisor's email address: pelant@fzu.cz Abstract: The aim of this work is to study the optical properties of the mate- rial based on oxidized silicon nanocrystals (Si-ncs) embedded at high densities in SiO2-based matrix. These materials seem to be very promising on the way towards silicon laser. Using our preparation technique - modified electrochemical etching and post-etching in H2O2 - we obtain small Si-ncs with the mean core size of 2-3 nm, in- corporated at high densities of ∼ 1019 Si-ncs/cm3 into an SiO2-based matrix. In this work, we focused on studying their photoluminiscence (PL) properties and measuring the net optical gain of these samples. Therefore, we investigated their time-resolved and steady-state PL emission spectra which revealed two emission bands - the F-band (∼ 435 nm) with ns decay-time and the S-band (∼ 600 − 620 nm) with µs decay- time. Moreover, we observed a "green" emission band (∼ 500 nm) present only during the pulsed excitation and immediately after. We performed time-resolved gain spec- troscopy using...
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Centra rekombinace v semiizolačním CdTe
Zázvorka, Jakub ; Franc, Jan (advisor) ; Fiederle, Michael (referee)
Title: Recombination centers in semiinsulating CdTe Author: Jakub Zázvorka Department / Institute: Institute of Physics of Charles University Supervisor of the master thesis: prof. Ing. Jan Franc, DrSc., Institute of Physics of Charles University Abstract: The properties of CdTe for application as a radiation detector are influenced through the presence of deep levels in the bang gap. These energy levels complicate the charge collection and the detector efficiency. Contactless resistivity mapping (COREMA) represents a good option for material characterization without the necessity of metal contacts application. The time-dependent charge measurement was investigated on an adjusted apparatus in FMF Freiburg. Theoretical model of charge transport based on band bending on the sample surface was proposed and a non-exponential behavior was calculated. Using this, the resulted parameter tendencies and their connection with deep level trap or recombination center were explained. A correlation was observed between resistivity, photoconductivity and a near midgap level photoluminescence. Parameter profiles were explained using the theory of Fermi level shift relative to the near midgap level. Three deep levels were observed on samples grown at the Charles University in Prague. Their photoluminescence supports the...
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Electrochemical etching of silicon
Vrzal, Pavel ; Voborný, Stanislav (referee) ; Šamořil, Tomáš (advisor)
The electrochemical etching is very used technique for semiconductor materials modification. Different structures which find applications in many fields (biotechnology, nanotechnology or electronics) can be prepared by this technique. The task of bachelor’s thesis was preparation of porous silicon using electrochemical etching. At first, a study dedicated to porous Si was carried out. Experimental part of this work deals with a design of etching cell which was used for preparation of porous silicon by electrochemical etching. In addition, the porous Si was prepared by metal assisted chemical etching. Subsequently, created structures were analyzed by scanning electron microscopy. Photoluminescence properties of porous silicon were studied as well.
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