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The photoluminescence properties measurement of ultrathin films
Metelka, Ondřej ; Mach, Jindřich (referee) ; Šamořil, Tomáš (advisor)
The thesis briefly describes the principles and types of luminescence. In the first following research of study is also discussed the equipment which is applicable to photoluminescence experiments, including the arrangement. The second research focuses on the influence of the properties of gallium nitride (GaN) (ultra) thin films and other structures prepared by various ways on shape of photoluminescence spectra. The paperwork also describes the further optimization of photoluminescent apparatus used for the measurement of photoluminescence spectrum in the UV light radiation which is located at the Institute of Physical Engineering at the Technical University. The extension of measurements at low temperatures (design and construction of its own cryostat) is added. The conclusion concernes the test measurements to determine the effect of various settings of the apparatus on the resulting measured photoluminescence spectrum.
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Thin Films of Sb2S3 Doped by Sm3+ Ions
Frumarová, Božena ; Bílková, M. ; Frumar, M. ; Repka, M. ; Jedelský, J.
Pure and Sm3+ doped amorphous thin films of Sb2S3 were prepared by thermal co-evaporation of Sb2S3 and Sm metal. From transmittance measurement, the absorption edge, index of refraction, thickness , Eg opt relative permittivity, single oscillator energy and dispersion energy were determined.
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