|
|
Structure defects in SiC radiation detectors
Zetek, Matyáš ; Belas, Eduard (advisor)
Silicon carbide (SiC), is a wide band gap (2.4 eV < Eg < 3.3 eV) semiconducting material well known for its potential applications in high-temperature, high-power, high-frequency or hard radiation resistant devices. In this thesis, we are broadening elementary knowledge about this material. We identify energy levels in the material, using Photo-Hall effect spectroscopy supported by the temperature dependency of classic Hall effect measurement and temperature dependent photoluminescence. This knowledge is essential to allow SiC application as a radiation detector.
|
|
|
Vliv defektů ve dřevě na stanovení rychlosti šíření zvuku ve dřevě v čerstvém stavu
Vobořil, Matěj
This bachelor research deals with determining the speed of sound propagation in wood in fresh state. Specifically, maple milk (Acer platanoides L.) was investigated. Acoustic properties were determined by the non-destructive method thanks device from Fakopp company. These were an ultrasonic timer and a microsecond timer. Sensors like SD02, TD45 and US10 were selected for measurement. The primary objective was to determine the velocity of the sound signal propagating both 1 m long trunk and the 20 x 20 x 300 mm sized samples and to determine the effect of wood defects on that velocity. The secondary objective was to determine the dependence of the measured results depending on the world side.
|
|
|
Structure defects in SiC radiation detectors
Zetek, Matyáš ; Belas, Eduard (advisor)
Silicon carbide (SiC), is a wide band gap (2.4 eV < Eg < 3.3 eV) semiconducting material well known for its potential applications in high-temperature, high-power, high-frequency or hard radiation resistant devices. In this thesis, we are broadening elementary knowledge about this material. We identify energy levels in the material, using Photo-Hall effect spectroscopy supported by the temperature dependency of classic Hall effect measurement and temperature dependent photoluminescence. This knowledge is essential to allow SiC application as a radiation detector.
|
|
|
Interaction of organic molecules with metal passivated semiconductor surfaces studied via STM
Zimmermann, Petr ; Sobotík, Pavel (advisor)
Title Interaction of Organic Molecules with Metal Passivated Silicon Surfaces Studied via STM Author Petr Zimmermann Department Department of Plasma and Surface Science Supervisor Doc. RNDr. Pavel Sobotík, CSc. Department of Plasma and Surface Science Abstract Organic molecules offer a wide range of optical, electronic or chemical properties. Coupling them to silicon could pave way to novel applications and devices, however, a controlled molecular functionalization of silicon remains challenging due to the presence of highly reactive dangling bonds on its surfaces. We attempt to decrease the reactivity of low index silicon surfaces with an ultra-thin layer of a metal adsorbates and study their interaction with organic molecules via scanning tunnelling microscopy. In the first part we investigate the interaction of ethylene, a small unsaturated molecule, with tin and indium 1D chains grown on Si(001) - 2 × 1. The chains consist of dimers structurally analogous to the dimers of the underlying Si(001) - 2 × 1 surface. Aided by photoelectron spectroscopy we find that the Sn chains are less reactive than the Si(001) surface and that the absence of a π dimer bond renders indium chains inert. In the second part we study the interaction of copper phthalocyanine, a small macrocyclic heteroaromatic compound, with the...
|
|
|
Interaction of organic molecules with metal passivated semiconductor surfaces studied via STM
Zimmermann, Petr ; Sobotík, Pavel (advisor) ; Plšek, Jan (referee) ; Šikola, Tomáš (referee)
Title Interaction of Organic Molecules with Metal Passivated Silicon Surfaces Studied via STM Author Petr Zimmermann Department Department of Plasma and Surface Science Supervisor Doc. RNDr. Pavel Sobotík, CSc. Department of Plasma and Surface Science Abstract Organic molecules offer a wide range of optical, electronic or chemical properties. Coupling them to silicon could pave way to novel applications and devices, however, a controlled molecular functionalization of silicon remains challenging due to the presence of highly reactive dangling bonds on its surfaces. We attempt to decrease the reactivity of low index silicon surfaces with an ultra-thin layer of a metal adsorbates and study their interaction with organic molecules via scanning tunnelling microscopy. In the first part we investigate the interaction of ethylene, a small unsaturated molecule, with tin and indium 1D chains grown on Si(001) - 2 × 1. The chains consist of dimers structurally analogous to the dimers of the underlying Si(001) - 2 × 1 surface. Aided by photoelectron spectroscopy we find that the Sn chains are less reactive than the Si(001) surface and that the absence of a π dimer bond renders indium chains inert. In the second part we study the interaction of copper phthalocyanine, a small macrocyclic heteroaromatic compound, with the...
|
|
|
Analyse and Optimise Production Process of Prototypes
Hamr, Tomáš ; Zatloukal, Miroslav (referee) ; Starý, Jiří (advisor)
This diploma thesis summarizes basic findings about issues of making development samples of PCB. The emphasis is especially on required quality which complies with mentioned norms. The theoretical section includes methodology for evaluating quality dismounted boards, assembling and soldering, parameters of components under different environmental circumstances. The practical part is carried out in cooperation with the department EEG in R&D Automotive Lighting Jihlava. It is dedicated to the design and the preparation of development samples where the quality is assessed according to given methodology from the theoretical part. PCB are analyzed by an X-ray, metallographic grinding and other methods. Recommendations are given and based on results for improvements.
|
|
|
Structure defects in SiC radiation detectors
Zetek, Matyáš ; Belas, Eduard (advisor) ; Hazdra, Pavel (referee)
Silicon carbide (SiC), is a wide band gap (2.4 eV < Eg < 3.3 eV) semiconducting material well known for its potential applications in high-temperature, high-power, high-frequency or hard radiation resistant devices. In this thesis, we are broadening elementary knowledge about this material. We identify energy levels in the material, using Photo-Hall effect spectroscopy supported by the temperature dependency of classic Hall effect measurement and temperature dependent photoluminescence. This knowledge is essential to allow SiC application as a radiation detector.
|
|
|
Study of hydrogen interaction with defects in thin metallic films
Hruška, Petr ; Čížek, Jakub (advisor) ; Krsjak, Vladimír (referee) ; Mathis, Kristián (referee)
Thin metallic films are particularly interesting as potential hydrogen storage materials as well as hydrogen sensitive optical sensors. Thin films with various microstructure from nanocrystalline to epitaxial can be relatively easily prepared by varying the deposition parameters. Deposition of multi-layers enables preparation of thin films with arbitrary composition. Defects structure plays a key role in hydrogen absorption. Hydrogen atoms segregated at open volume defects reduce their formation energy leading to enhan- ced concentration of hydrogen-induced defects in the material. Moreover hydrogen diffusion along dislocations and grain boundaries facilitates hydrogen absorption in the metal lattice. Thin films clamped to the stiff substrate undergo anisotropic volume expansion during the hydrogen loading. As a consequence high stresses are induced in the film and can result in detachment of the film from the substrate. In this work hydrogen absorption in Gd and Pd films and Pd-Mg multi-layers was studied. Development of the defect structure of hydrogen-loaded films was investigated by means of variable energy positron annihilation spectroscopy com- bined with X-ray diffraction, atomic force microscopy and optical transmittance measurement. Complementary studies of interaction of hydrogen with defects in...
|
|
|
Investigation of defects in quasicrystals
Vlček, Marián ; Čížek, Jakub (advisor)
Název práce: Studium defekt· v kvazikrystalech Autor: Marián Vlček Katedra: Katedra fyziky nízkých teplot Vedoucí disertační práce: doc. Mgr. Jakub ížek, Ph.D., Katedra fyziky nízkých teplot Abstrakt: V predloženej práci boli pomocou spektroskopie doby života poz- itrónov a koincidenčnej spektroskopie Dopplerovského rozšírenia anihilačného píku študované zliatiny WE43 s prídavkom zinku a ternárne zliatiny Mg-Zn-Y. V týchto zliatinách bola nedávno zistená prítomnos' ikosahedrálnej fázy Mg3Zn6Y1 s kvázikryštalickou štruktúrou, čo pritiahlo pozornos' výskumníkov. Spektroskopia doby života pozitrónov preukázala prítomnos' unikátnych vakanciám podobných defektov na rozhraní ikosahedrálnej fázy a horčíkovej matrice, ktoré sú charakter- istické pre horčíkové zliatiny obsahujúce ikosahedrálnu fázu. Tepelné spracovanie skúmaných zliatin vedie k významným zmenám morfológie hraničných fáz. Ke¤že vakanciám podobné defekty spojené s ikosahedrálnou fázou sa vyskytujú na jej rozhraní s horčíkovou matricou, zmeny v morfológii ikosahedrálnej fázy vedú k výrazným zmenám koncentrácie týchto defektov. "alej boli skúmané vzorky pripravené uhlovým pretláčaním kanálom rovnakého prierezu. Typy defektov prítomné v týchto zliatinách a ich teplotná stabilita bola určená pomocou spektroskopie doby života pozitrónov a merania tvrdosti...
|
|
|
Investigation of defects in quasicrystals
Vlček, Marián ; Čížek, Jakub (advisor) ; Hnilica, František (referee) ; Petriska, Martin (referee)
Název práce: Studium defekt· v kvazikrystalech Autor: Marián Vlček Katedra: Katedra fyziky nízkých teplot Vedoucí disertační práce: doc. Mgr. Jakub ížek, Ph.D., Katedra fyziky nízkých teplot Abstrakt: V predloženej práci boli pomocou spektroskopie doby života poz- itrónov a koincidenčnej spektroskopie Dopplerovského rozšírenia anihilačného píku študované zliatiny WE43 s prídavkom zinku a ternárne zliatiny Mg-Zn-Y. V týchto zliatinách bola nedávno zistená prítomnos' ikosahedrálnej fázy Mg3Zn6Y1 s kvázikryštalickou štruktúrou, čo pritiahlo pozornos' výskumníkov. Spektroskopia doby života pozitrónov preukázala prítomnos' unikátnych vakanciám podobných defektov na rozhraní ikosahedrálnej fázy a horčíkovej matrice, ktoré sú charakter- istické pre horčíkové zliatiny obsahujúce ikosahedrálnu fázu. Tepelné spracovanie skúmaných zliatin vedie k významným zmenám morfológie hraničných fáz. Ke¤že vakanciám podobné defekty spojené s ikosahedrálnou fázou sa vyskytujú na jej rozhraní s horčíkovou matricou, zmeny v morfológii ikosahedrálnej fázy vedú k výrazným zmenám koncentrácie týchto defektov. "alej boli skúmané vzorky pripravené uhlovým pretláčaním kanálom rovnakého prierezu. Typy defektov prítomné v týchto zliatinách a ich teplotná stabilita bola určená pomocou spektroskopie doby života pozitrónov a merania tvrdosti...
|
guest ::
