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Photogeneration of charge carriers in substituted polyacetylenes
Jex, Michal
We present an improved model of charge carrier photogeneration in π-conju- gated polymers with weak intermolecular interactions based on the model of Arkhipov. It includes quantum effects affecting the creation of charge transfer states, which occurs as an intermediate step in the free charge carrier photo- generation process. The electrostatic potential between the electron and the hole and transfer integrals needed for the calculation of the potential barrier for the charge transfer state dissociation are calculated quantum-chemically. We apply our model on experimental data of the charge carrier photogenera- tion efficiency in poly[1-trimethylsilylphenyl,2-phenyl]acetylene to explain its dependence on applied electric field. We eliminate several problems of the previous model. We are able to fit experimental data with just one set of parameters in the whole interval of the applied electric field. We do not have to consider several intervals of the electric field separately as in the previous work and reduce the number of needed parameters to three. Key words π-conjugated polymers, charge carrier photogeneration, photoconductivity 1
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Recombination centers in semiinsulating CdTe
Zázvorka, Jakub
Title: Recombination centers in semiinsulating CdTe Author: Jakub Zázvorka Department / Institute: Institute of Physics of Charles University Supervisor of the master thesis: prof. Ing. Jan Franc, DrSc., Institute of Physics of Charles University Abstract: The properties of CdTe for application as a radiation detector are influenced through the presence of deep levels in the bang gap. These energy levels complicate the charge collection and the detector efficiency. Contactless resistivity mapping (COREMA) represents a good option for material characterization without the necessity of metal contacts application. The time-dependent charge measurement was investigated on an adjusted apparatus in FMF Freiburg. Theoretical model of charge transport based on band bending on the sample surface was proposed and a non-exponential behavior was calculated. Using this, the resulted parameter tendencies and their connection with deep level trap or recombination center were explained. A correlation was observed between resistivity, photoconductivity and a near midgap level photoluminescence. Parameter profiles were explained using the theory of Fermi level shift relative to the near midgap level. Three deep levels were observed on samples grown at the Charles University in Prague. Their photoluminescence supports the...
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Photogeneration of charge carriers in substituted polyacetylenes
Jex, Michal
We present an improved model of charge carrier photogeneration in π-conju- gated polymers with weak intermolecular interactions based on the model of Arkhipov. It includes quantum effects affecting the creation of charge transfer states, which occurs as an intermediate step in the free charge carrier photo- generation process. The electrostatic potential between the electron and the hole and transfer integrals needed for the calculation of the potential barrier for the charge transfer state dissociation are calculated quantum-chemically. We apply our model on experimental data of the charge carrier photogenera- tion efficiency in poly[1-trimethylsilylphenyl,2-phenyl]acetylene to explain its dependence on applied electric field. We eliminate several problems of the previous model. We are able to fit experimental data with just one set of parameters in the whole interval of the applied electric field. We do not have to consider several intervals of the electric field separately as in the previous work and reduce the number of needed parameters to three. Key words π-conjugated polymers, charge carrier photogeneration, photoconductivity 1
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Ultrafast response of electrons in nanostructured and disordered semiconductor systems studied by time-resolved terahertz spectroscopy
Zajac, Vít ; Kužel, Petr (advisor) ; Lloyd-Hughes, James (referee) ; Ostatnický, Tomáš (referee)
of Doctoral Thesis Title: Ultrafast response of electrons in nanostructured and disordered semiconductor systems studied by time-resolved terahertz spectroscopy Author: Vít Zajac Department / Institute: Institute of Physics of the Czech Academy of Sciences Supervisor of the doctoral thesis: doc. RNDr. Petr Kužel, Ph.D., Institute of Physics of the Czech Academy of Sciences Abstract: This thesis deals with charge transport in semiconducting nanomaterials on the picosecond time scale studied by time-resolved terahertz spectroscopy. The problematics of the effective response of composite materials is reviewed and the VBD effective medium model is formulated. The wave equation for the THz probing pulse propagating through inhomogeneously excited percolated and non-percolated semiconducting nanomaterials is solved. This theory is used to investigate charge transport in samples of nanoporous-Si-derived nanocrystals and in epitaxial Si nanocrystal superlattices. The experimental spectra are successfully modeled with the use of Monte Carlo calculations of charge carrier mobility in nanocrystals of corresponding sizes and degrees of percolation within the VBD approximation. It is found that nanocrystals from different regions of the nanocrystal size distribution of the sample dominate the signal in THz and...
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Photogeneration of charge carriers in substituted polyacetylenes
Jex, Michal ; Pfleger, Jiří (advisor) ; Nachtigall, Petr (referee)
We present an improved model of charge carrier photogeneration in π-conju- gated polymers with weak intermolecular interactions based on the model of Arkhipov. It includes quantum effects affecting the creation of charge transfer states, which occurs as an intermediate step in the free charge carrier photo- generation process. The electrostatic potential between the electron and the hole and transfer integrals needed for the calculation of the potential barrier for the charge transfer state dissociation are calculated quantum-chemically. We apply our model on experimental data of the charge carrier photogenera- tion efficiency in poly[1-trimethylsilylphenyl,2-phenyl]acetylene to explain its dependence on applied electric field. We eliminate several problems of the previous model. We are able to fit experimental data with just one set of parameters in the whole interval of the applied electric field. We do not have to consider several intervals of the electric field separately as in the previous work and reduce the number of needed parameters to three. Key words π-conjugated polymers, charge carrier photogeneration, photoconductivity 1
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Recombination centers in semiinsulating CdTe
Zázvorka, Jakub
Title: Recombination centers in semiinsulating CdTe Author: Jakub Zázvorka Department / Institute: Institute of Physics of Charles University Supervisor of the master thesis: prof. Ing. Jan Franc, DrSc., Institute of Physics of Charles University Abstract: The properties of CdTe for application as a radiation detector are influenced through the presence of deep levels in the bang gap. These energy levels complicate the charge collection and the detector efficiency. Contactless resistivity mapping (COREMA) represents a good option for material characterization without the necessity of metal contacts application. The time-dependent charge measurement was investigated on an adjusted apparatus in FMF Freiburg. Theoretical model of charge transport based on band bending on the sample surface was proposed and a non-exponential behavior was calculated. Using this, the resulted parameter tendencies and their connection with deep level trap or recombination center were explained. A correlation was observed between resistivity, photoconductivity and a near midgap level photoluminescence. Parameter profiles were explained using the theory of Fermi level shift relative to the near midgap level. Three deep levels were observed on samples grown at the Charles University in Prague. Their photoluminescence supports the...
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Defects limiting charge collection in semiinsulated CdZnTe
Zajac, Vít ; Franc, Jan (advisor) ; Šikula, Josef (referee)
Title: Defects limiting charge collection in semiinsulated CdZnTe Author: Vít Zajac Department: Institute of Physics of Charles University Supervisor: doc. Ing. Jan Franc, DrSc., Institute of Physics of Charles University Abstract: We achieved to detect photoluminescence transitions deep in the band gap in 4 samples cut from 2 different crystals of semiinsulating Cd1-xZnxTe (x = 0,02 - 0,18) in a row of points along the growth axis. The spectral peaks give evidence of the presence of deep levels in the sample and the intensity of the photoluminescence peaks is to a certain extent proportional to the concentration of these levels. A comparison between resistivity and photoconductivity that were measured by a contact-less method showed that the change of photoluminescence intensity of deep levels does not bring about an unambigous change of neither resistivity nor photoconductivity. Correlation analysis of resistivity and photoconductivity of 6 samples from 4 different crystals confirmed the following model: A shift of the Fermi level within the band gap induced by a change of donor-acceptor compensation is accompanied by an unambigous change of resistivity and results in a change in occupation of the deep levels. This causes a change in the photoconductivity of the crystal because the occupation factor of...
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Centra rekombinace v semiizolačním CdTe
Zázvorka, Jakub ; Franc, Jan (advisor) ; Fiederle, Michael (referee)
Title: Recombination centers in semiinsulating CdTe Author: Jakub Zázvorka Department / Institute: Institute of Physics of Charles University Supervisor of the master thesis: prof. Ing. Jan Franc, DrSc., Institute of Physics of Charles University Abstract: The properties of CdTe for application as a radiation detector are influenced through the presence of deep levels in the bang gap. These energy levels complicate the charge collection and the detector efficiency. Contactless resistivity mapping (COREMA) represents a good option for material characterization without the necessity of metal contacts application. The time-dependent charge measurement was investigated on an adjusted apparatus in FMF Freiburg. Theoretical model of charge transport based on band bending on the sample surface was proposed and a non-exponential behavior was calculated. Using this, the resulted parameter tendencies and their connection with deep level trap or recombination center were explained. A correlation was observed between resistivity, photoconductivity and a near midgap level photoluminescence. Parameter profiles were explained using the theory of Fermi level shift relative to the near midgap level. Three deep levels were observed on samples grown at the Charles University in Prague. Their photoluminescence supports the...
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