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Quantitative analysis of matrix elements using SIMS and LEIS methods
Staněk, Jan ; Šik, Ondřej (referee) ; Bábor, Petr (advisor)
This thesis studies comparison and connection of two spectrometric methods – low energy ion scattering spektrometry (LEIS) and secondary ion mass spectrometry (SIMS). SIMS method, despite its many positive qualities, suffers of so called matrix effect, which makes quantifiaction of data very difficult. LEIS method on the other hand is immune to this effect and so it’s suitable completion of SIMS method. As a convenient sample have been chosen AlGaN samples with various concentration of gallium and aluminium. In the first part of thesis is introduced physical essence of SIMS and LEIS method, experimental details and studied samples. In second part of the thesis there’s a description of measurements and comparison of data gained by each method.
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Study of catalytic reaction waves by SIMS
Jaroš, Antonín ; Willinger, Marc Georg (referee) ; Bábor, Petr (advisor)
Katalytické reakce jsou klíčové pro mnoho technologických oblastí. Abychom docílili jejich zlepšení, je potřeba porozumět jejich mechanismu, k čemuž je důležité vyvíjet nové in-operando techniky. Operando spektroskopie jsou obecně rozděleny do dvou kategorií: velkoplošné techniky, které poskytují zprůměrované informace z celé analyzované oblasti, přičemž nemusí zaznamenat signál z důležitých aktivních míst, a lokalizované techniky, které poskytují informace na atomární úrovni, ovšem nemusí relevantní aktivní místa obsahovat vůbec. V této práci je demonstrováno, že hmotnostní spektrometrie sekundárních iontů je bezprecedentní způsob, jak v reálném čase sledovat oscilační vlny během oxidace CO, poskytující mikro-spektroskopická data, která jsou klíčová pro rozluštění složitého katalytického mechanismu. Ukazuje se, že v nízkých tlacích jsou reakční vlny tvořeny střídajícími se vlnami oxidu platiny a adsorbovaného oxidu uhelnatého. Mechanismus reakce spočívá v redukci oxidu pomocí CO. Navíc jsou oxid platiny a CO adsorbáty nehomogenně rozloženy napříč vln, což je nejvíce patrné na reakční vlnoploše.
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Structural Analysis Of Gaas-Based Pv Cells After Ionizing Irradiation
Papež, Nikola
Morphology and structural analysis of photovoltaic cells based on GaAs before and after high dose gamma radiation of 500 kGy was investigated. Cobalt-60 emitter was used as the synthetic radioactive isotope. This radioactive form of cobalt is commonly used for space instruments and devices testing. Atomic force microscopy (AFM) was used to study the morphology and roughness differences. Cross-sectional investigation using transmission detector to thin layers observing was performed. Also, with use of sputtering system of Secondary Ion Mass Spectroscopy (SIMS) a detailed molecular and elemental information about the surface top layers was showed. Another molecular and structural changes in the top layers using two optical methods of Raman spectroscopy and spectrophotometry were also identified.
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Correlative tomography
Vařeka, Karel ; Touš,, Jan (referee) ; Bábor, Petr (advisor)
Předložená diplomová práce se zabývá korelativním přístupem multimodální analýzy struktur prokovování s různým rozlišením. Výzkum je součástí mezinárodního projektu týkajícího se charakterizace poruch zmíněných struktur, které jsou implementovány v polovodičových zařízeních. Kombinace korelativní mikroskopie a tomografie technikami NanoXCT, FIB-SEM (EDS), FIB-SIMS a AFM byla navržena k zavedení opakovatelného pracovního postupu. Tomografie fokusovaným iontovým svazkem je metoda přesného odprašování v řezech, která mimo jiné v každém průřezu získává cenné snímky s vysokým rozlišením (FIB-SEM) nebo mapy chemického složení (FIB-SIMS). Následující transformace obrazu umožňuje identifikaci defektů jako funkci hloubky ve struktuře. Práce dále věnuje pozornost metodám sjednocení obrazů za účelem optimální prezentace získaných dat.
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Effect of implantation of C, Si and Cu into ZrNb nanometric multilayers
Daghbouj, N. ; Karlík, M. ; Lorinčík, J. ; Polcar, T. ; Callisti, M. ; Havránek, Vladimír
Sputter-deposited Zr/Nb nanometric multilayer films with a periodicity (L) in the range from 6 to 167 nm were subjected to carbon, silicon and copper ion irradiation with low and high fluences at room temperature. The ion profiles, mechanical proprieties, and disordering behavior have been investigated by using a variety of experimental techniques (Secondary Ion Mass Spectrometry - SIMS, nanoindentation, X-ray diffraction - XRD, and scanning transmission electron microscopy - STEM). On the STEM bright field micrographs there is damage clearly visible on the surface side of the multilayer. Deeper, the most damaged and disordered zone, located close to the maximum ion concentration, was observed. The in-depth C and Si concentration profiles obtained from SIMS were not affected by the periodicity of the nanolayers. This is in accordance with SRIM simulations. XRD and electron diffraction analyses suggest a structural evolution in relation to L. After irradiation, Zr (0002) and Nb (110) reflexions overlap for L=6 nm. For the periodicity L > 6 nm the Zr (0002) peak is shifted to higher angles and Nb (110) peak is shifted to lower angles.
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Tomographical analysis of semiconductor devices by FIB-SIMS
Mičulka, Martin ; Voborný, Stanislav (referee) ; Bábor, Petr (advisor)
This thesis deals with a tomographic analysis of the structure of through-silicon via utilizing TOF-SIMS; a method used in electrotechnical industry. A focused ion beam isused to create a cross section of a semiconductor to reveal its inner structure. Afterwards a newly created surface is analysed by TOF-SIMS to determine its chemical composition. A series of 2D images is created which are used for tomographic reconstruction of the through-silicon via. Moreover, the thesis deals with an optimization of FIB-SIMS method by employing oxygen ion beam for improvement of ionized sputter yield and for artifacts reduction. A measurement of instability of bismuth ion beam is demonstrated as well.
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Quantitative analysis of matrix elements using SIMS and LEIS methods
Staněk, Jan ; Šik, Ondřej (referee) ; Bábor, Petr (advisor)
This thesis studies comparison and connection of two spectrometric methods – low energy ion scattering spektrometry (LEIS) and secondary ion mass spectrometry (SIMS). SIMS method, despite its many positive qualities, suffers of so called matrix effect, which makes quantifiaction of data very difficult. LEIS method on the other hand is immune to this effect and so it’s suitable completion of SIMS method. As a convenient sample have been chosen AlGaN samples with various concentration of gallium and aluminium. In the first part of thesis is introduced physical essence of SIMS and LEIS method, experimental details and studied samples. In second part of the thesis there’s a description of measurements and comparison of data gained by each method.
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2D and 3D analysis of semiconductor devices by SIMS
Vařeka, Karel ; Šamořil, Tomáš (referee) ; Bábor, Petr (advisor)
The chemical analysis of semiconductor structures using the SIMS method is the main part of this bachelor thesis. It allows the user to make a depth profiling and a creation of 2D or 3D material images. During the analysis of the chip from the TIGBT semiconductor, there is a sputtering of a heterogeneous structure in the material with different sputtering rates. It is convenient to make a cut through the material using a focused ion beam to create a profile, which grants the user to perform a tomographic measurement. This new surface enables a chemical analysis of a depth profile of semiconductor structures without the need for sputtering beam in dynamic SIMS mode. By reconstructing individual two-dimensional images, it is possible to assemble a three-dimensional pattern of the analysed sample area. Also, the preparation and removal of the lamella from the TIGBT chip were accomplished and analysed via a detector of transmission electrons.
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