Národní úložiště šedé literatury Nalezeno 15 záznamů.  předchozí11 - 15  přejít na záznam: Hledání trvalo 0.01 vteřin. 
Actuators for Flow Control Based on Plasma Principle
Procházka, Pavel P. ; Uruba, Václav ; Šonský, Jiří
One can distinguish between two types of flow control, passive and active. Active flow control has a few advantages. The biggest advantage is a possibility to influence the flow only if there is a need. By contrast, the passive control acts all the time and for all regimes and this is not good in terms of fuel consumption, for example. Active flow control provides the necessary momentum to the shear layer from an external source, as opposed to passive control which uses the momentum of free stream of fluid.
PIV Measurement Used for Investigation of Flow Field near Plasma Discharge
Procházka, Pavel P. ; Uruba, Václav
The flow structures generated in vicinity of plasma actuator are studied experimentally. Plasma actuator is introduced briefly. Time-resolved PIV as an optical measurement method is utilized. Some special aspects of this actuator for flow control are shown. It is discussed an influence of electrostatic field of actuator to the velocity of different tracing particles. Some examples are introduced.
FLOW NEAR PLASMA DISCHARGE WITH LOW-FREQUENCY MODULATION
Uruba, Václav ; Procházka, Pavel P. ; Matějka, Milan
The flow-field near plasma glue discharge on the wall is studied experimentally using time resolved PIV technique. Effect of low-frequency amplitude modulation of the electric supply of flow is tested.
Plazmové budiče pro řízení proudění
Procházka, Pavel ; Šonský, Jiří ; Uruba, Václav
V práci je přehled budičů na principu plazmového výboje, které budou použity pro řizení proudění.
Luminescence in organic silicons prepared from organic precursors in plasma discharges
Horváth, P. ; Schauer, F. ; Kuřitka, I. ; Salyk, O. ; Weiter, M. ; Dokoupil, N. ; Nešpůrek, Stanislav ; Fidler, V.
Photoluminescence of plasma prepared the poly[methyl(phenyl)silanediyl] - during the change from linear 1D Si chain to amorphous 3D Si network was studied. The excitonic band with maximum at 353 nm in 1D Si undergoes a blue shift and broadening on introducing networking defects. With the gradual transition from 1D to 3D structure the redistribution of oscillator intensity along the absorption edge was observed.

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