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Examination of semiconductor structures with slow electrons
Frank, Luděk ; Müllerová, Ilona
Possibilities for visualization of the doped areas and variances in the local density of electron states are briefly reviewed. First examples are presented of utilizing very slow electrons in a cathode lens equipped SEM for this purpose. These include acquisition of the doping contrast via secondary electrons and observation of the local energy band structure by means of elastically backscattered electrons.

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