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Studium vlastností dopovaného křemíku pomocí fotoemisní elektronové mikroskopie s využitím energiového filtru
 Hovorka, Miloš ; Frank, Luděk ; Valdaitsev, D. ; Nepijko, S. ; Elmers, H. ; Schönhense, G.
4) PEEM equipped with high-pass energy filter as a surface sensitive tool was used for characterization of electron-optical contrast between differently doped areas in silicon. The native-oxide covered samples of both p- and n-type with dopant concentrations of 1015 to 1019 cm-3 were observed. In full photoemission the contrast disappears when decreasing the dopant concentration, while in filtered images the inverted contrast is preserved for all dopant concentrations. The photothreshold difference between p- and n-type (indicated by the shift of the energy spectra) increases up to 0.2 eV at the highest concentrations.
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