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Srovnávací studie heterostruktur s kvantovými jámami pomocí tranzientní spektroskopie hlubokých hladin
Kosíková, Jitka ; Žďánský, Karel ; Rudra, A. ; Kapon, E.
Deep level transient spectroscopy (DLTS) and capacitance-voltage measurements have been made on AlGaAs/GaAs diode structures containing quantum wells (QW) prepared with graded and with step aluminium content as well as on structures without QWs.A new DLTS peak has been observed in the structures containing QWs, either with graded or with step structure. Mechanisms of electron transitions explaining the new results has been discussed.

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