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Záchyt vodíku defekty ve vrstvách připravených TEA CO2 laserem ablací oxidi křemnatého a křemičitého
 Dřínek, Vladislav ; Vacek, Karel ; Južakov, G. ; Pola, Josef ; Naumov, S.
Silicon based deposits were prepared by TEA CO2 pulsed laser ablation of SiO and SiO2 targets in the atmosphere of noble gases. Chemical groups and hydrogen related radical were detected by means FTIR and EPR analyses and theoretical calculations. In SiO2 deposits the concentration of silyl resp. peroxy radical was determined to be 5.8.10(18)/g resp. 6.2.10(19)/g. In SiO deposits the ratio of [=Si(:)]/[Si(.)] was measured. After exposure of the SiO deposit to H2 a EPR doublet with hyperfine splitting 7.7 mT was observed. The best agreement between calculated and experiment values was found for the cluster(O2H)Si(.).
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