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	Optical properties of the GaN on sapphire Skalský, Miroslav ; Janta, Jiří ; Čtyroký, Jiří ; Stejskal, J. ; Hüttel, I. The method of mode spectroscopy was used to measure optical properties of epitaxial layers of gallium nitride (GaN) deposited onto the sapphire substrate. The results of the measurement of the layer thickness, refractive indices, and the attenuation of guided modes at the wavelengths of 632.8 nm and 781 nm are presented. From experimental values of attenuation of different guided modes, the contributions of bulk absorption and scattering at the interfaces of the layer to the total optical loss in the waveguide are determined. Detailed record
	Optical low-coherence reflectometry Čtyroký, Jiří ; Janta, Jiří ; Skalský, Miroslav Detailed record
	Profil indexu lomu planárního optického vlnovodu II. (Refractive-index profile of planar optical waveguide) Janta, Jiří Detailed record
	Diagnostic methods for planar optical waveguides Čtyroký, Jiří ; Janta, Jiří ; Skalský, Miroslav ; Schröfel, J. Detailed record
	Rozklad integrovaně optických struktur pro litografickou technologii. (Decomposition of integrated-optical structures for lithographic technology) Janta, Jiří Detailed record

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