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Secondary electron contrast of dopped regions in semiconductor - a matter of surface treatment?
 Frank, Luděk ; Müllerová, Ilona ; El-Gomati, M.
Direct observation of doped patterns in semiconductor, usually on cleavedsections through multilayers but recently also in plan views of patterneddoping of a technological layer, is acquiring high interest because of its straightforward application in the semiconductor technology. Plenty of experimental data has been collected [1-4] from conventional SEM observation and recently first results showed improved contrasts attainable with specimen immersed into electric field. Main features are the sign of contrast- the p-type regions are always brighter than the n-type ones, and the contrast grows toward lower energies.
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