National Repository of Grey Literature 7 records found  Search took 0.01 seconds. 
Semiconductor nanowire growth utilizing alloyed catalyst
Musálek, Tomáš ; Rezek, Bohuslav (referee) ; Kolíbal, Miroslav (advisor)
This master's thesis deals with growth of germanium nanowires using different catalyst particles. The emphasis is mainly layed on fabrication of specific alloyed catalyst consisting of (AgGa). In the first part of the thesis are mentioned two most common concepts of nanowire growth and the importance of phase diagrams for their interpretation. Method for production of alloyed catalyst is demonstrated and experiments focused on the growth of germanium nanowires using this catalyst were performed. Moreover, method for modification of germanium surface via anisotropic etching is demonstrated as well. Such etched structures are suitable for nanowire growth with the help of different kinds of catalyst particles or for the growth of nanowires made of various materials.
Fabrication of nanostructures using wet chemical etching
Musálek, Tomáš ; Šamořil, Tomáš (referee) ; Kolíbal, Miroslav (advisor)
This bachelor's thesis deals with wet anisotropic etching of silicon and germanium. Two different approaches to the formation of anisotropic etch pits are shown. The supporting activities required for etching procedure are described. Especially, preparation of mask by electron beam litography, etching of SiO2 resp. GeO2 and application of metal particles.
Metallic nanostructures with three-dimensional topography for plasmonics
Rovenská, Katarína ; Kvapil, Michal (referee) ; Ligmajer, Filip (advisor)
Due to high concentration of free electrons, metallic nanostructures can support plasmonic resonances. The spectral shape of plasmonic resonances may be tuned by many factors and because of it, the field of their application, given by their capability of focusing light under the diffraction limit, broadens. This thesis deals with fabrication of gold nanostructures by electron beam litography on top of a silicon substrate. The topography of the substrate is subsequentially modified by wet anistropic etching. A part of this thesis also briefly reviews methods for fabrication of nanostructures with planar or three-dimensional topography. Using the infrared spectroscopy, this thesis further analyzes the effect of size, shape, spacing of the nanostructures, and also the substrate topography on the optical response of the fabricated nanostructures. The outcomes of this thesis verify previously described tendencies of spectral relations between optical properties and named parameters in the mid-infrared region.
Metallic nanostructures with three-dimensional topography for plasmonics
Rovenská, Katarína ; Kvapil, Michal (referee) ; Ligmajer, Filip (advisor)
Due to high concentration of free electrons, metallic nanostructures can support plasmonic resonances. The spectral shape of plasmonic resonances may be tuned by many factors and because of it, the field of their application, given by their capability of focusing light under the diffraction limit, broadens. This thesis deals with fabrication of gold nanostructures by electron beam litography on top of a silicon substrate. The topography of the substrate is subsequentially modified by wet anistropic etching. A part of this thesis also briefly reviews methods for fabrication of nanostructures with planar or three-dimensional topography. Using the infrared spectroscopy, this thesis further analyzes the effect of size, shape, spacing of the nanostructures, and also the substrate topography on the optical response of the fabricated nanostructures. The outcomes of this thesis verify previously described tendencies of spectral relations between optical properties and named parameters in the mid-infrared region.
Nanopatterning of Silicon Nitride Membranes
Matějka, Milan ; Krátký, Stanislav ; Řiháček, Tomáš ; Kolařík, Vladimír ; Chlumská, Jana ; Urbánek, Michal
Membranes are typically created by a thin silicon nitride (SIN) layer deposited on a silicon wafer. Both, top and bottom side of the wafer is covered by a thin layer of the silicon nitride. The principle of silicon nitride membranes preparation is based on the wet anisotropic etching of the bottom side of the silicon wafer with crystallographic orientation (100). While the basic procedure for the preparation of such membranes is well known, the nano patterning of thin membranes presents quite important challenges. This is partially due to the mechanical stress which is typically presented within such membranes. The resolution requirements of the membrane patterning have gradually increased. Advanced lithographic techniques and etching procedures had to be developed. This paper summarizes theoretical aspects, technological issues and achieved results. The application potential of silicon nitride membranes as a base for multifunctional micro system (MMS) is also\ndiscussed.
Semiconductor nanowire growth utilizing alloyed catalyst
Musálek, Tomáš ; Rezek, Bohuslav (referee) ; Kolíbal, Miroslav (advisor)
This master's thesis deals with growth of germanium nanowires using different catalyst particles. The emphasis is mainly layed on fabrication of specific alloyed catalyst consisting of (AgGa). In the first part of the thesis are mentioned two most common concepts of nanowire growth and the importance of phase diagrams for their interpretation. Method for production of alloyed catalyst is demonstrated and experiments focused on the growth of germanium nanowires using this catalyst were performed. Moreover, method for modification of germanium surface via anisotropic etching is demonstrated as well. Such etched structures are suitable for nanowire growth with the help of different kinds of catalyst particles or for the growth of nanowires made of various materials.
Fabrication of nanostructures using wet chemical etching
Musálek, Tomáš ; Šamořil, Tomáš (referee) ; Kolíbal, Miroslav (advisor)
This bachelor's thesis deals with wet anisotropic etching of silicon and germanium. Two different approaches to the formation of anisotropic etch pits are shown. The supporting activities required for etching procedure are described. Especially, preparation of mask by electron beam litography, etching of SiO2 resp. GeO2 and application of metal particles.

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