National Repository of Grey Literature 2 records found  Search took 0.00 seconds. 
The formation of trenches with a submicron width for advanced power semiconductor devices
Bolcek, Martin ; Jankovský, Jaroslav (referee) ; Szendiuch, Ivan (advisor)
This diploma thesis focuses on the optimization of photolithography process in the production of semiconductor devices. It contains theoretical basis of step by step photolithography process on a silicon substrate. It also describes metal-semiconductor contact and Trench Schottky Rectifier. The main goal of this thesis is design and optimization settings of photolithography process for the formation of trenches with a width of less than 0,5 µm. The new photolithography setup was verified across manufacturing process of trenches. The work was carried out in cooperation with ON Semiconductor Czech Republic, s.r.o. in Roznov pod Radhostem.
The formation of trenches with a submicron width for advanced power semiconductor devices
Bolcek, Martin ; Jankovský, Jaroslav (referee) ; Szendiuch, Ivan (advisor)
This diploma thesis focuses on the optimization of photolithography process in the production of semiconductor devices. It contains theoretical basis of step by step photolithography process on a silicon substrate. It also describes metal-semiconductor contact and Trench Schottky Rectifier. The main goal of this thesis is design and optimization settings of photolithography process for the formation of trenches with a width of less than 0,5 µm. The new photolithography setup was verified across manufacturing process of trenches. The work was carried out in cooperation with ON Semiconductor Czech Republic, s.r.o. in Roznov pod Radhostem.

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