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National Repository of Grey Literature 2 records found  Search took 0.01 seconds. 
Selective growth of GaN layers on substrate modificated by method FIB
 Mareš, Petr ; Voborný, Stanislav (referee) ; Mach, Jindřich (advisor)
The thesis deals with the selective growth of GaN crystals on the SiO2 layer. The theoretical part discusses the type of growth of ultrathin layers with focus on gallium nitride and its manufacturing. Moreover the text deals with principles of the focused ion beam and basic principles of other further methods which were used for analyzing the samples (AFM, XPS, photoluminescence spectroscopy). Experimental part consists of depositions of GaN. The silicon wafer Si(111) with native oxide SiO2 (1-2 nm) was used as a substrate. Focused ion beam was utilized to manufacture suitable structures on the substrate. Selective growth was acomplished with the use of the postnitridation method. Method of the pulse deposition was introduced with focus on increasing the volume of crystals.
Detailed record
Selective growth of GaN layers on substrate modificated by method FIB
 Mareš, Petr ; Voborný, Stanislav (referee) ; Mach, Jindřich (advisor)
The thesis deals with the selective growth of GaN crystals on the SiO2 layer. The theoretical part discusses the type of growth of ultrathin layers with focus on gallium nitride and its manufacturing. Moreover the text deals with principles of the focused ion beam and basic principles of other further methods which were used for analyzing the samples (AFM, XPS, photoluminescence spectroscopy). Experimental part consists of depositions of GaN. The silicon wafer Si(111) with native oxide SiO2 (1-2 nm) was used as a substrate. Focused ion beam was utilized to manufacture suitable structures on the substrate. Selective growth was acomplished with the use of the postnitridation method. Method of the pulse deposition was introduced with focus on increasing the volume of crystals.
Detailed record

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