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Semiconductor devices production on silicon
Ježek, Vladimír ; Mikulík, Petr (referee) ; Špinka, Jiří (advisor)
This work deals with the basic technologies and processes of manufacturing semiconductor devices on a silicon substrate. Deals with the processes from creating a layer of silicon dioxide by oxidation, through the creation of structures using photolithography, the doping of additives into defined areas of diffusion, up to creating contacts and conductive pathways by sputtering. It also deals with the technological production process for silicon devices, description of devices and measurement, calculation layers of silicon dioxide, calculated of diffusion and measured characteristics of components and their evaluation.
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The formation of trenches with a submicron width for advanced power semiconductor devices
Bolcek, Martin ; Jankovský, Jaroslav (referee) ; Szendiuch, Ivan (advisor)
This diploma thesis focuses on the optimization of photolithography process in the production of semiconductor devices. It contains theoretical basis of step by step photolithography process on a silicon substrate. It also describes metal-semiconductor contact and Trench Schottky Rectifier. The main goal of this thesis is design and optimization settings of photolithography process for the formation of trenches with a width of less than 0,5 µm. The new photolithography setup was verified across manufacturing process of trenches. The work was carried out in cooperation with ON Semiconductor Czech Republic, s.r.o. in Roznov pod Radhostem.
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The formation of trenches with a submicron width for advanced power semiconductor devices
Bolcek, Martin ; Jankovský, Jaroslav (referee) ; Szendiuch, Ivan (advisor)
This diploma thesis focuses on the optimization of photolithography process in the production of semiconductor devices. It contains theoretical basis of step by step photolithography process on a silicon substrate. It also describes metal-semiconductor contact and Trench Schottky Rectifier. The main goal of this thesis is design and optimization settings of photolithography process for the formation of trenches with a width of less than 0,5 µm. The new photolithography setup was verified across manufacturing process of trenches. The work was carried out in cooperation with ON Semiconductor Czech Republic, s.r.o. in Roznov pod Radhostem.
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Semiconductor devices production on silicon
Ježek, Vladimír ; Mikulík, Petr (referee) ; Špinka, Jiří (advisor)
This work deals with the basic technologies and processes of manufacturing semiconductor devices on a silicon substrate. Deals with the processes from creating a layer of silicon dioxide by oxidation, through the creation of structures using photolithography, the doping of additives into defined areas of diffusion, up to creating contacts and conductive pathways by sputtering. It also deals with the technological production process for silicon devices, description of devices and measurement, calculation layers of silicon dioxide, calculated of diffusion and measured characteristics of components and their evaluation.
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