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Preparation and characterization of nanostructured III-V semiconductor materials
Maniš, Jaroslav ; Kostelník,, Petr (oponent) ; Hospodková,, Alice (oponent) ; Šikola, Tomáš (vedoucí práce)
The aim of the presented PhD thesis was to develop and analyze gallium nitride (GaN) nanostructures in three different forms. Firstly, three dimensional GaN nanocrystals prepared on graphene were studied from the perspective of the intrinsic crystal properties as well as growth statistics. Adopting the method of droplet epitaxy allowed the formation of such nanostructures at a low substrate temperature (T = 200°C). In order to demonstrate possible applications, the proof of concept of an UV sensitive device was designed and tested with the successful results and the great promise to the future work. Secondly, two dimensional GaN nanostructures were prepared on a pristine silicon surface also at low temperature (T = 200°C). Following experiments were focused on a study of a crystal structure and an elemental analysis as these structures have been observed for the first time. Two dimensional structures are promising candidates into the high power applications which are emerging in these days. Thus, preparation of such 2D GaN nanostructures serves as a solid foundation for the further research. Thirdly, one dimensional GaN horizontal nanowires were fabricated on different sapphire planes. The prepared nanowires provided adequate dataset for the subsequent data analysis related to the growth kinetics. Collected dataset was used for verification of the developed theoretical model of the nanowire growth. It has been shown that the theoretical model describes the growth of nanowires with great precision and, thus, provide a useful insight into the growth mechanisms.
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