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National Repository of Grey Literature 3 records found  Search took 0.00 seconds. 
Optical gating of epitaxial graphene
 Fridrišek, Tomáš ; Dědič, Václav (advisor)
Silicon carbide (SiC) is a wide band gap semiconductor with high thermal, chemical and mechanical resistance. By thermal decomposition of silicon from SiC, it is possible to grow high quality epitaxial graphene on the surface. This production can be industrially scaled. This work investigates whether it is possible to optically gate epitaxial graphene and what effect the surrounding environment has on the electrical stability of epitaxial graphene. The experimental part of the work consists of optimizing preparation of the sample contacts using electron beam lithography. Further investigates the influence of surrounding atmosphere on the electrical properties of graphene, measuring the dependence of photocurrent on optical power and spectral dependence of photoconductivity of graphene. The significant effect of adsorption of molecules from the environment on the electrical properties of graphene has been demonstrated.
Detailed record
Optical gating of epitaxial graphene
 Fridrišek, Tomáš ; Dědič, Václav (advisor) ; Nádvorník, Lukáš (referee)
Silicon carbide (SiC) is a wide band gap semiconductor with high thermal, chemical and mechanical resistance. By thermal decomposition of silicon from SiC, it is possible to grow high quality epitaxial graphene on the surface. This production can be industrially scaled. This work investigates whether it is possible to optically gate epitaxial graphene and what effect the surrounding environment has on the electrical stability of epitaxial graphene. The experimental part of the work consists of optimizing preparation of the sample contacts using electron beam lithography. Further investigates the influence of surrounding atmosphere on the electrical properties of graphene, measuring the dependence of photocurrent on optical power and spectral dependence of photoconductivity of graphene. The significant effect of adsorption of molecules from the environment on the electrical properties of graphene has been demonstrated.
Detailed record
Measurement of the electric field in semiconductor detector with non-trivial contact geometry
 Fridrišek, Tomáš ; Dědič, Václav (advisor) ; Trojánek, František (referee)
The main aim of this bachelor thesis was to investigate whether it is possible to use a new method based on the electro-optical Pockels effect, to study the internal electric field in the coplanar grid detector. The Pocklels coefficient for CdZnTe was determined by measuring the detector with trivial contact geometry. Subsequently, the found Pockels coefficient was used for evaluation of 2D vector field for samples with non-trivial contact geometry. This method was successful to evaluate the electric field in almost entire volume in coplanar grid detectors.
Detailed record

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