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Surface and mechanical properties of a-CSi:H and a-CSiO:H films
Plichta, Tomáš ; Shukurov, Andrey (referee) ; Klapetek, Petr (referee) ; Čech, Vladimír (advisor)
The dissertation thesis deals with the preparation and characterisation of a-CSi:H and a CSiO:H thin films prepared using the process of plasma enhanced chemical vapour deposition (PECVD). Tetravinylsilane (TVS) and its mixtures with argon and oxygen were used to deposit films on both planar substrates and fibre bundles. Main characterisation techniques were employed to study the topography of films, namely atomic force microscopy (AFM). Their mechanical properties were studied through nanoindentation; the nanoscratch test was used to assess the film adhesion to the substrate. Other analysed properties were internal stress and friction coefficient. The particular attention was paid to the work of adhesion and its determination. This knowledge was further applied to the preparation of surface treatments of glass fibres and, subsequently, polymer composites. Those were tested using the push-out test and the short beam shear test. Based on the results, the effects of deposition conditions and the relationships between the studied properties and quantities were determined.
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Modification of construction of the device for measuring laser light scattering from rough surfaces
Jaworková, Magdalena ; Klapetek, Petr (referee) ; Ohlídal, Miloslav (advisor)
This diploma thesis deals with a design modification of detection part of the laboratory instrument for measuring the topography of rough surfaces – laser goniometric scatterometer (SM II). Design modification is based on replacement of so far used detector instead for the detector of higher quality with better measurement parameters. The first part of the diploma thesis contains theoretical basics, which are necessary to understand the relationship between scalar diffraction theory and scattering measurements of monochromatic light. The emphasis is on the importance of choosing appropriate detection coordinates, which are affecting the aberrations of detected diffracted light. The practical part is dedicated to improving the sensitivity of the detection part of the scatterometer SM II that is used in The laboratory of coherence optics at IFE FME BUT. This part justifies the choice of the detector which predetermines both the use of optical elements and the overall design of the detection part as the goniometer.
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Spatial confinement effects in metamagnetic nanostructures
Jaskowiec, Jiří ; Klapetek, Petr (referee) ; Uhlíř, Vojtěch (advisor)
Silné prostorové omezení materiálů způsobuje jejich nové vlastnosti, které mohou najit uplatnění v mnoha vědeckých i technických odvětvích. Snaha zmenšit velikosti součástek, zvětšit hustotu zápisu a zefektivnit procesy je současným trendem elektronického průmyslu. V této práci je studován vliv prostorového omezení na vlastnosti metamagnetického železo-rhodia (FeRh) během fázové přeměny. FeRh je materiál vykazující fázovou přeměnu prvního druhu mezi antiferomagnetickou a feromagnetickou fází. Metodou mikroskopie magnetických sil v magnetickém poli kolmém na rovinu vzorku je zobrazeni a analyzována struktura fázových domén behem fázové přeměny. Kvantitativní analýza naměřených dat je provedena užitím výškové korelační funkce a její výsledky jsou porovnány pro různé velikosti struktur a tloušťky tenkých vrstev.
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Applications of metallic probe for the control of optical processes and near-field imaging
Gallina, Pavel ; Klapetek, Petr (referee) ; Křápek, Vlastimil (advisor)
Hlavním předmětem této diplomové práce jsou elektromagnetické simulace pomocí metody konečných prvků (FEM) k vyšetření vlivu grafenu na hrotem zesílenou Ramanovu spektroskopii (TERS) a povrchem zesílenou infračervenou absorpční spektroskopii (SEIRA) a k prozkoumání citlivosti sondy skenovacího optického mikroskopu blízkého pole (SNOM) ke složkám elektromagnetického pole v závislosti na parametrech sondy (průměru apertury v pokovení). Nejprve je proveden výpočet TERS systému složeného ze stříbrného hrotu nacházejícího se nad zlatým substrátem s tenkou vrstvou molekul, jehož účelem je porozumění principů TERS. Poté je na molekuly přidána grafenová vrstva, aby se prozkoumal její vliv ve viditelné (TERS) a infračervené (SEIRA) oblasti spektra. Druhá část práce se zabývá výpočty energiového toku SNOM hrotem složeným z pokoveného skleněného vlákna interagujícím s blízkým polem povrchových plasmonových polaritonů. Zde uvažujeme zlatou vrstvu se čtyřmi štěrbinami uspořádanými do čtverce na skleněném substrátu sloužícími jako zdroj stojatého vlnění povrchových plasmonů s prostorově oddělenými maximy složek elektrického pole orientovanými rovnoběžně či kolmo na vzorek. Ve výpočtech hrotem zesílené spektroskopie zjišťujeme, že grafen přispívá pouze malým dílem k zesílení pole ve viditelné oblasti spektra, ovšem v infračervené oblasti má grafen vliv pro záření s energií menší než dvojnásobek Fermiho energie grafenu, pro kterou je hodnota zesílení pole větší než v případě výpočtu bez grafenu. Avšak pro velmi vysoké vlnové délky zesílení pole v přítomnosti grafenu klesá pod (konstantní) hodnotu pro případ bez grafenu. Při studiu citlivosti SNOM hrotu k jednotlivým složkám pole shledáváme, že pro hrot se zlatým pokovením je energiový tok skleněným jádrem hrotu kombinací příspěvků energie prošlé aperturou a periodické výměny energie mezi povrchovým plasmonem šířícím se po vnějším okraji pokovení a mody propagujícími se v jádře. Dále zjišťujeme, že hroty s malou aperturou (či bez apertury) jsou více citlivé na složku elektrického pole orientovanou kolmo ke vzorku (rovnoběžně s osou hrotu), zatímco hroty s velkou aperturou sbírají spíše signál ze složky rovnoběžné s povrchem vzorku. V případě hrotu s hliníkovým pokovením jsou hroty citlivější ke složce pole rovnoběžné s povrchem, což je způsobeno slabším průnikem pole skrze pokovení.
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Numerical simulation of the laser light scattering from rough surfaces
Šulc, Václav ; Klapetek, Petr (referee) ; Ohlídal, Miloslav (advisor)
A Matlab numerical model for scattering simulation was proposed based on the solution derived from the Beckmann-Kirchhoff scalar theory of scattering of electromagnetic waves from rough surfaces. A series of various synthetic surface samples were obtained using the open source software Gwyddion on which numerical simulations of scattering were carried out. The validity of this numerical model was tested and compared with experimental results.
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Investigating model CeO2 and TiO2 systems by means of Scanning Tunneling Microscopy and Atomic Force Microscopy
Stetsovych, Oleksandr ; Mysliveček, Josef (advisor) ; Jelínek, Pavel (referee) ; Klapetek, Petr (referee)
Atomic scale characterization of materials is important for the fundamental understanding of their properties. Here, model systems of industrially relevant cerium and titanium oxides are characterized with the combination of the Scanning Tunneling Microscopy (STM) and Non Contact Atomic Force Microscopy (NC AFM). Cerium oxide model systems are represented by fully oxidized and partially reduced ultra-thin ceria films supported on copper single crystal. Interaction of the model ceria systems with catalytically important adsorbates (water, methanol) is studied on atomic scale. Titanium oxide model systems are represented by pentacene and C60 molecules adsorbed on the surface of bulk titania in anatase polymorph. Organic layers on titania are studied with intramolecular resolution with the help of the newly developed Double pass scanning mode of NC AFM. The atomic contrast formation mechanisms in STM and NC AFM on ceria and anatase surface are presented. Powered by TCPDF (www.tcpdf.org)
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Structuring and study of electronic and chemical properties of semiconductor surfaces
Verveniotis, Elisseos ; Rezek, Bohuslav (advisor) ; Bartošík, Miroslav (referee) ; Klapetek, Petr (referee)
of thesis Semiconductor materials play a crucial role in modern society as they have become integral parts of our daily life through personal computers, mobile phones, medical implants, solar panels and a plethora of other commercially available electronic devices. The semiconductor industry has been relying predominantly on silicon so far and will continue to do so for a few more years, until the material limits for miniaturization and device engineering are reached. Fortunately, worldwide research has already demonstrated that there are materials exhibiting superior mechanical, electronic, and optical properties and which can thus replace or at least complement silicon. This represents a very important step towards satisfying the ever rising global demand for smaller, faster, energy-efficient and cheaper electronic devices. To that end, nowadays research is focused on fabrication and characterization of diverse materials and nanostructures which are aimed to be integral in electronic devices. Due to the miniaturization, it is essential that the electronic, structural and chemical characterization and modification of those novel materials and structures is performed on the microscopic scale. The relatively young but nevertheless rapidly expanding and exciting field of nanoscience and...
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Luminescence of semiconductors studied by scanning near-field optical microscopy
Těšík, Jan ; Klapetek, Petr (referee) ; Křápek, Vlastimil (advisor)
This work is focused on the study of luminescence of atomic thin layers of transition metal chalkogenides (eg. MoS2). In the experimental part, the work deals with the preparation of atomic thin layers of semiconducting chalcogenides and the subsequent manufacturing of plasmonic interference structures around these layers. The illumination of the interference structure will create a standing plasmonic wave that will excite the photoluminescence of the semiconductor. Photoluminescence was studied both by far-field spectroscopy and near-field optical microscopy.
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Interaction of group III and IV metals with Si(100) surface in temperature range from 20 to 800K
Setvín, Martin ; Ošťádal, Ivan (advisor) ; Janda, Pavel (referee) ; Klapetek, Petr (referee)
1 Title: Interaction of group III and IV metals with Si(100) surface in temperature range from 20 to 800 K Author: Martin Setvín Department: Departement of Surface and Plasma Science Supervisor of the doctoral thesis: Doc. RNDr. Ivan Ošt'ádal CSc. Abstract: Interaction of group III and IV metals with Si(100) surface was studied by STM (Scanning Tunneling Microscopy) and AFM (Atomic Force Microscopy) in temperature range from 20 to 800 K. Adsorption and hopping of single metal adatoms on Si(100)-c(4×2) reconstruction can be observed by STM at low temperatures. Activation energies and frequency prefactors for hopping of single indium atoms were measured by two meth- ods - direct STM measurement at low temperature and Kinetic Monte Carlo simulations of layer growth at room temperature. Group III and IV atoms self-assemble into single atom wide chains on Si(100) surface at about room temperature. Atomic and electronic structure of the chains was investi- gated by means of STM and dynamic non-contact AFM. Keywords: Si(100), STM, AFM, adsorption, diffusion
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Design and Realization of the Second Generation Imaging Reflectometer and its Application in Optical Analysis of Thin Films
Vodák, Jiří ; Držík,, Milan (referee) ; Klapetek, Petr (referee) ; Ohlídal, Miloslav (advisor)
The work deals with a technique of imaging spectroscopic reflectometry developed at The Institute of Physical Engineering, Brno University of Technology. The technique is well suited for characterization of samples non–uniform along their surfaces. The technique is primarily used for optical characterization of thin films. First part of the work is focused on basic physical principles of the technique and on ways in which measurement data are obtained. It contains a basic description of evaluating methods and a basic concept of an imaging spectroscopic reflectometer with a description of main parts of such a device. The main part of the work is focused on a description of two devices which were built at The Institute of Physical Engineering together with a description of some of upgrades which were implemented to these devices during their development. A description of measurements done with the two devices is also included. Last part of the work is then focused on further development of the technique. Intention of possible evolution of the technique to imaging spectroscopic ellipsometry is proposed.
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