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	Control system of the Heat Flux furnace Kostka, František ; Zelinka, Jiří ; Kostka, Petr ; Houška, Zdeněk ; Zavadil, Jiří ; Starý, Robert ; Krechler, Jindřich ; Žďánský, Karel A control system for a two-crucible furnace for DTA has been designed and realized. Samples of heavy metal oxide glasses have been analysed by the system. Detailed record
	GROWTH OF InP CRYSTALS WITH RARE-EARTH ELEMENTS Yatskiv, Roman ; Grym, Jan ; Žďánský, Karel ; Pekárek, Ladislav ; Zavadil, Jiří We report on the influence of rare earth (RE) elements (Pr, Er, and Dy) addition during vertical Bridgman low pressure synthesis on the properties of InP crystals. The temperature dependent Hall measurement and low temperature photoluminescence (PL) spectroscopy were employed to study the changes in electrical and optical properties of the crystals. The observed changes are attributed to the gettering effect of REs caused by the high affinity of REs towards shallow impurities in InP. Detailed record
	LPE Growth of III-V Semiconductors from rare-earth Treated Melts Grym, Jan ; Procházková, Olga ; Zavadil, Jiří ; Žďánský, Karel We focus on the characterization of InP and InGaAsP layers prepared by liquid phase epitaxy with rare-earth admixtures. We applied photoluminescence spectroscopy (PL), capacitance-voltage measurements, and secondary ion mass spectroscopy in order to explain: (i) the gettering effect and conductivity crossover of InP layers for Pr treated samples, (ii) narrowing of the PL and elecroluminescent spectra of the active InGaAsP region of a double-heterostructure LED. Detailed record
	Films of Metal Nanoparticles Deposited on Semiconductors by Electrophoresis: Technology and Characterization Žďánský, Karel ; Zavadil, Jiří ; Kacerovský, Pavel ; Kostka, František ; Lorinčík, Jan ; Černohorský, O. ; Fojtík, A. ; Müller, M. ; Kostejn, M. Layers of nanoparticles in micelle enclosures were deposited on InP substrates by electrophoresis from isooctane colloid solutions containing Pd or Ag nanoparticles. The layers were investigated by SIMS, low-temperature photoluminescence spectroscopy and topography, absorption spectroscopy, Raman spectroscopy and sensitivity to hydrogen. Photoluminescence of InP was enhanced by the layers of Pd or Ag nanoparticles. Schottky barriers made on the n-type InP with layers containing Pd nanoparticles showed significant sensitivity to hydrogen in contrast to those containing Ag nanoparticles. Detailed record
	Control system for laser topograph Kostka, František ; Žďánský, Karel ; Starý, Robert ; Šmíd, A. ; Krechler, Jindřich The goal of the laser-topograph control systems is the measured sample positions control in the perpendicular plane to the direction of the laser beam and data sampling from lock-in-amplifier. The lock-in-amplifier is detecting the secondary luminescence light from the measured sample. Detailed record
	Srovnávací studie heterostruktur s kvantovými jámami pomocí tranzientní spektroskopie hlubokých hladin Kosíková, Jitka ; Žďánský, Karel ; Rudra, A. ; Kapon, E. Deep level transient spectroscopy (DLTS) and capacitance-voltage measurements have been made on AlGaAs/GaAs diode structures containing quantum wells (QW) prepared with graded and with step aluminium content as well as on structures without QWs.A new DLTS peak has been observed in the structures containing QWs, either with graded or with step structure. Mechanisms of electron transitions explaining the new results has been discussed. Detailed record
	Detektory rtg a částicového záření na bázi indium fosfidu Pekárek, Ladislav ; Žďánský, Karel Indium phospide single crystals were grown by Czochralski method. Various dopants were added to the melt to obtain semi-insulating crystals suitable for detection purposes. Prototype detectors were prepared and evaluated by spectral detection of alpha particles and x-rays. Detailed record
	Růst InP metodou LPE s přídavkem prvků vzácných zemin do taveniny Grym, Jan ; Procházková, Olga ; Zavadil, Jiří ; Žďánský, Karel Addition of REs to the growth melt is known to have purifying effect on AIIIBV LPE layers. Each member of REs family acts in its own way. Small addition of Tb, Dy, Tm, and Pr leads to pronounced gettering of shallow donors, the high purity n-type InP can be grown. Exceeding certain concentration, reversal of conductivity type from n to p occurs. Addition of Tm during growth on InP:Fe substrates always results in the preparation of semi-insulating layers due to Fe out-diffusion mediated by RE admixture. Detailed record
	Thickness dependence of transport properties of Bi.sub.2./sub.Te.sub.3./sub. layers Zeipl, Radek ; Lošťák, P. ; Pavelka, Martin ; Žďánský, Karel ; Jelínek, Miroslav ; Walachová, Jarmila The transport properties of layers, prepared by laser ablation, as Hall mobility and conductivity on their thickness at room temperature are presented. This thermoelectric materials is potential candidate for many applications as for thermoelectric devices for power generation, cooling and sensors. Detailed record
	Thickness dependence of transport properties of Bi.sub.2./sub.Te.sub.3./sub. layers Zeipl, Radek ; Lošťák, P. ; Pavelka, Martin ; Žďánský, Karel ; Jelínek, Miroslav ; Walachová, Jarmila The transport properties of layers, prepared by laser ablation, as Hall mobility and conductivity on their thickness at room temperature are presented. This thermoelectric materials is potential candidate for many applications as for thermoelectric devices for power generation, cooling and sensors. Detailed record

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