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Structure defects in SiC radiation detectors
Zetek, Matyáš ; Belas, Eduard (advisor)
Silicon carbide (SiC), is a wide band gap (2.4 eV < Eg < 3.3 eV) semiconducting material well known for its potential applications in high-temperature, high-power, high-frequency or hard radiation resistant devices. In this thesis, we are broadening elementary knowledge about this material. We identify energy levels in the material, using Photo-Hall effect spectroscopy supported by the temperature dependency of classic Hall effect measurement and temperature dependent photoluminescence. This knowledge is essential to allow SiC application as a radiation detector.
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Structure defects in SiC radiation detectors
Zetek, Matyáš ; Belas, Eduard (advisor)
Silicon carbide (SiC), is a wide band gap (2.4 eV < Eg < 3.3 eV) semiconducting material well known for its potential applications in high-temperature, high-power, high-frequency or hard radiation resistant devices. In this thesis, we are broadening elementary knowledge about this material. We identify energy levels in the material, using Photo-Hall effect spectroscopy supported by the temperature dependency of classic Hall effect measurement and temperature dependent photoluminescence. This knowledge is essential to allow SiC application as a radiation detector.
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Structure defects in SiC radiation detectors
Zetek, Matyáš ; Belas, Eduard (advisor) ; Hazdra, Pavel (referee)
Silicon carbide (SiC), is a wide band gap (2.4 eV < Eg < 3.3 eV) semiconducting material well known for its potential applications in high-temperature, high-power, high-frequency or hard radiation resistant devices. In this thesis, we are broadening elementary knowledge about this material. We identify energy levels in the material, using Photo-Hall effect spectroscopy supported by the temperature dependency of classic Hall effect measurement and temperature dependent photoluminescence. This knowledge is essential to allow SiC application as a radiation detector.
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Electrical and optical properties of ZnO single crystals
Zetek, Matyáš ; Belas, Eduard (advisor) ; Moravec, Pavel (referee)
In this thesis, we study electrical and optical properties of ZnO single crystals, by processing measurements of Hall effect to low temperatures. We also research how defects influence ZnO single crystal in terms of its electrical properties. We studied donors and acceptors levels in this material and their activation energies. We try to find what cause these donors and acceptors. We characterized material with its electrical conductivity, carrier concentration and carrier mobility. We carry an experiment of annealing ZnO in vapor of Zn, while we are looking for a change in mobility and a change in defect structure. As well we process photoluminescence measurement, the ZnO was excited with 355nm laser - light energy higher than the bandgap. We see green luminescence and its shift towards blue part of the spectra after annealing the crystals in ZnO vapor. Powered by TCPDF (www.tcpdf.org)
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