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Influence of the annealing on the native defects concentration in (CdZn)Te semiconductors.
Bugár, Marek
Paper is focused on finding an optimal annealing treatment for elimination of concentration of inclusions in (CdZn)Te. Demands for material used for MBE growth of (HgCd)Te are material without crystal imperfections, infrared transmittance above 60% and good crystalline quality. These parameters were measured by the X-ray diffraction rocking curve (XRC) method, Infrared Fourier Transform spectrometer and Infrared microscopy. The influence of annealing in the range of 600-850řC in Cd overpressure was investigated on saples contained Te-rich inclusions. The change of shape of Te-rich inclusions and infrared transmittance after annealing in Tellurium vapor was measured. The influence of annealing in Te overpressure in the range of 600-800řC was also investigated o samples contained Cd-rich inclusions, one sample was annealed in Cd overpressure.
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Dynamics of structural defects in CdTe-based semiconductors
Bugár, Marek ; Belas, Eduard (advisor) ; Holý, Václav (referee) ; Fochuk, Petro (referee)
Title: Dynamics of structural defects in CdTe-based semiconductors Author: RNDr. Marek Bugár Institute: Institute of Physics, Charles University in Prague Supervisor of the doctoral thesis: Doc. Ing. Eduard Belas CSc.; Institute of Physics, Charles University in Prague Abstract: The work was aimed at investigation of the effect of annealing on structural, electrical and optical properties of CdZnTe epitaxial substrates and CdTe-based and CdZnTe-based X-ray and gamma-ray detectors. The first part of the work is focused on investigation of structural properties of one type of second phase defects - inclusions - present in the material, which degrade the material quality. Consequent annealing experiments were aimed at reduction of these defects. In case of CdZnTe substrates, an annealing treatment leading to increase of the infrared transmittance was investigated. On the other hand, annealing experiments on the detectors of high-energetic radiation were focused on preservation of the high-resistive state. Moreover, the work contains detailed measurements of transport properties of CdTe taken directly at high temperatures. Key words: CdTe, annealing, inclusions, detectors, defects
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Influence of the annealing on the native defects concentration in (CdZn)Te semiconductors.
Bugár, Marek ; Belas, Eduard (advisor) ; Sopko, Bruno (referee)
Paper is focused on finding an optimal annealing treatment for elimination of concentration of inclusions in (CdZn)Te. Demands for material used for MBE growth of (HgCd)Te are material without crystal imperfections, infrared transmittance above 60% and good crystalline quality. These parameters were measured by the X-ray diffraction rocking curve (XRC) method, Infrared Fourier Transform spectrometer and Infrared microscopy. The influence of annealing in the range of 600-850řC in Cd overpressure was investigated on saples contained Te-rich inclusions. The change of shape of Te-rich inclusions and infrared transmittance after annealing in Tellurium vapor was measured. The influence of annealing in Te overpressure in the range of 600-800řC was also investigated o samples contained Cd-rich inclusions, one sample was annealed in Cd overpressure.
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Influence of the annealing on the native defects concentration in (CdZn)Te semiconductors.
Bugár, Marek
Paper is focused on finding an optimal annealing treatment for elimination of concentration of inclusions in (CdZn)Te. Demands for material used for MBE growth of (HgCd)Te are material without crystal imperfections, infrared transmittance above 60% and good crystalline quality. These parameters were measured by the X-ray diffraction rocking curve (XRC) method, Infrared Fourier Transform spectrometer and Infrared microscopy. The influence of annealing in the range of 600-850řC in Cd overpressure was investigated on saples contained Te-rich inclusions. The change of shape of Te-rich inclusions and infrared transmittance after annealing in Tellurium vapor was measured. The influence of annealing in Te overpressure in the range of 600-800řC was also investigated o samples contained Cd-rich inclusions, one sample was annealed in Cd overpressure.
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