National Repository of Grey Literature 3 records found  Search took 0.00 seconds. 
Amorfní tenké vrstvy Ag-Sb-S připravené radiofrekvenčním magnetronovým naprašováním
Gutwirth, J. ; Wágner, T. ; Drašar, Č. ; Beneš, L. ; Vlček, M. ; Hrdlička, M. ; Frumar, M. ; Schwarz, J. ; Tichá, H. ; Peřina, Vratislav
Thin Ag-Sb-S films were prepared by RF magnetron sputtering as potential candidates for rewritable optical data storage films. There were prepared polycrystalline bulks of AgSbS2. Composition and homogeneity of these bulks were checked. Targets for RF magnetron sputtering were prepared from pulverized bulks by hot pressing technique. Targets were characterized the same way as bulks. Composition and homogeneity of prepared thin films were characterized by SEM-EDX and RBS/ERDA, amorphous/crystalline character was studied by XRD. Optical properties (spectral dependence of refractive index) were evaluated on basis of UV-Vis-NIR spectroscopy and variable angle spectral ellipsometry (VASE). Crystallization abilities were traced by thermal dependence of optical transmission of prepared thin films.
Výzkum postupu pro přípravu aktivních a pasivních vlnovodů v polovodičích
Prajzler, V. ; Špirková, J. ; Oswald, J. ; Peřina, Vratislav ; Hüttel, I. ; Hamáček, J. ; Machovič, V. ; Burian, Z.
The magnetron sputtering was used to fabricate RE doped GaN layers fabricated by magnetron sputtering on various substrate using a gaseous mixture of nitrogen and argon as precursors. The doping of the GaN films with RE occurred simultaneously with the sputtering process when placing the metal RE pellets or RE powder onto the Ga2O3 target. The amount of the incorporated erbium increased with increasing weight of the RE pellets or RE powder. We observed photoluminescence emission at 1 550 nm due to the 4I13/2 → 4I15/2 transition under excitation at 488 nm and 980 nm.

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