National Repository of Grey Literature 1 records found  Search took 0.00 seconds. 
Lasery s tenkými InAs vrstvami v GaAs - absorpce a elektroluminiscence
Mačkal, Adam
Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperature (above 25.sup.o./sup.C). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range

Interested in being notified about new results for this query?
Subscribe to the RSS feed.