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Influence of rare-earth elements on InP-based semiconductor structures for radiation detectors
Grym, Jan ; Procházková, Olga
Preparation and characterization of InP epitaxial layers with Tb admixture in the growth melt is reported. Structural, electrical and optical properties of InP layers exhibit a signaficant dependence on the presence of Tb and its concentration in the melt. When increasing the concentration of Tb in the growth melt the reversal of electrical conductivity occurs.

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