National Repository of Grey Literature 2 records found  Search took 0.00 seconds. 
Study of microdefects in Czochralski silicon
Španělová, Klára ; Cába, Vladislav (referee) ; Másilko, Jiří (advisor)
The bachelor's thesis deals with the study of microdefects in Czochralski silicon in cooperation with the company onsemi Rožnov pod Radhoštěm. The main objectiv is to find knowledge about microdefects in Czochralski silicon and their influence on the properties of semiconductor components. The experimental part deals with the characterization of microdefects in Czochralski silicon ingots doped by B, P and Sb and grown in the company onsemi. Specifically, the measurement of radial resistivity is performance using a four-point probe with subsequent conversion to dopant concentration (according to ASTM F 723-99). The radial and axial distribution of microdefects in Czochralski silicon ingots is evaluated using the precipitation test and the OISF test. The position of the vacant-interstitial interface was also detected as part of microdefect study.
Study of microdefects in Czochralski silicon
Španělová, Klára ; Cába, Vladislav (referee) ; Másilko, Jiří (advisor)
The bachelor's thesis deals with the study of microdefects in Czochralski silicon in cooperation with the company onsemi Rožnov pod Radhoštěm. The main objectiv is to find knowledge about microdefects in Czochralski silicon and their influence on the properties of semiconductor components. The experimental part deals with the characterization of microdefects in Czochralski silicon ingots doped by B, P and Sb and grown in the company onsemi. Specifically, the measurement of radial resistivity is performance using a four-point probe with subsequent conversion to dopant concentration (according to ASTM F 723-99). The radial and axial distribution of microdefects in Czochralski silicon ingots is evaluated using the precipitation test and the OISF test. The position of the vacant-interstitial interface was also detected as part of microdefect study.

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