Home > Search Results: keywords:"dichalkogenidy přechodných kovů (TMD)"
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National Repository of Grey Literature 2 records found  Search took 0.00 seconds. 
Luminescence of semiconductors studied by scanning near-field optical microscopy
 Těšík, Jan ; Klapetek, Petr (referee) ; Křápek, Vlastimil (advisor)
This work is focused on the study of luminescence of atomic thin layers of transition metal chalkogenides (eg. MoS2). In the experimental part, the work deals with the preparation of atomic thin layers of semiconducting chalcogenides and the subsequent manufacturing of plasmonic interference structures around these layers. The illumination of the interference structure will create a standing plasmonic wave that will excite the photoluminescence of the semiconductor. Photoluminescence was studied both by far-field spectroscopy and near-field optical microscopy.
Detailed record
Luminescence of semiconductors studied by scanning near-field optical microscopy
 Těšík, Jan ; Klapetek, Petr (referee) ; Křápek, Vlastimil (advisor)
This work is focused on the study of luminescence of atomic thin layers of transition metal chalkogenides (eg. MoS2). In the experimental part, the work deals with the preparation of atomic thin layers of semiconducting chalcogenides and the subsequent manufacturing of plasmonic interference structures around these layers. The illumination of the interference structure will create a standing plasmonic wave that will excite the photoluminescence of the semiconductor. Photoluminescence was studied both by far-field spectroscopy and near-field optical microscopy.
Detailed record

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