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Diffusion of native defects and impurities in CdTe/CdZnTe
Šedivý, Lukáš ; Belas, Eduard (advisor) ; Šíma, Vladimír (referee)
Title: Diffusion of native defects and impurities in CdTe/CdZnTe. Author: Lukáš Šedivý Author's e-mail address: luky.sedivy@seznam.cz Department: Institute of Physics of Charles University Supervisor: Doc. Ing. Eduard Belas, CSc. Supervisor's e-mail address: belas@karlov.mff.cuni.cz Abstract: In this thesis, the influence of structural defects on the electrical and de- tection characteristics of CdTe material was investigated. The performed research fo- cused on the reduction of structural defects in the material by annealing in Cd or Te vapor, while preserving acceptable features for X-ray and γ-ray detection. The mate- rial was characterized by measurement of the electrical resistivity and concentration and mobility of free carriers. Tellurium and cadmium inclusions were studied using infrared microscope. The static and dynamic properties of defect structures at high temperatures and de- fined Cd pressures was investigated, as well, and chemical diffusion coeficients describing the dynamic properties of these defects were experimentally determined. Keywords: monocrystal CdTe, structural defects in semiconductors, annealing in Cd or Te, chemical diffusion coefficient, γ-ray detectors. 1
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Diffusion of native defects and impurities in CdTe/CdZnTe
Šedivý, Lukáš ; Belas, Eduard (advisor) ; Šíma, Vladimír (referee)
Title: Diffusion of native defects and impurities in CdTe/CdZnTe. Author: Lukáš Šedivý Author's e-mail address: luky.sedivy@seznam.cz Department: Institute of Physics of Charles University Supervisor: Doc. Ing. Eduard Belas, CSc. Supervisor's e-mail address: belas@karlov.mff.cuni.cz Abstract: In this thesis, the influence of structural defects on the electrical and de- tection characteristics of CdTe material was investigated. The performed research fo- cused on the reduction of structural defects in the material by annealing in Cd or Te vapor, while preserving acceptable features for X-ray and γ-ray detection. The mate- rial was characterized by measurement of the electrical resistivity and concentration and mobility of free carriers. Tellurium and cadmium inclusions were studied using infrared microscope. The static and dynamic properties of defect structures at high temperatures and de- fined Cd pressures was investigated, as well, and chemical diffusion coeficients describing the dynamic properties of these defects were experimentally determined. Keywords: monocrystal CdTe, structural defects in semiconductors, annealing in Cd or Te, chemical diffusion coefficient, γ-ray detectors. 1
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