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In-situ characterization of semiconductors using scanning probe microscopy techniques
Očkovič, Adam ; Pléha, David (referee) ; Pavera, Michal (advisor)
The thesis focuses on the analysis of semiconductor components using scanning probe microscopy. In the first part, crystalline substances are classified according to their electrical properties. Then, the theory of intrinsic and extrinsic semiconductors, PN transitions and finally the basic types and functions of transistors are introduced. In the second section, SPM techniques and their principles of operation are presented, which are suitable for failure analysis of semiconductor devices. The third chapter introduces the measurement setup, which consists of a scanning electron microscope MIRA and a scanning probe microscope LiteScope, which uses self-sensing probes. In the fourth chapter, the semiconductor samples analyzed were tungsten plugs in a cross-section of CMOS chip, a cross-section of bipolar transistor, and a lamella of unipolar MOSFET transistor. Analysis of these samples was performed using AFM, CAFM, EFM, KPFM and SSRM techniques in the last chapter. For each technique and sample, an analysis of the measured data was performed. Together with the techniques, the basic limitations and interesting outputs for failure analysis were presented.
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