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Model of MOSFET transistor in program SystemVision
Michálek, Branislav ; Brančík, Lubomír (referee) ; Kolka, Zdeněk (advisor)
This bachelor thesis deals with modeling of MOS transistor. The theoretical part of the thesis is dedicated to analysis of basic MOSFET structure and operation, basics of modeling in general, descriptions of SPICE models LEVEL1 and LEVEL3 and model parameters extraction by using the optimization technique. The realization part is dedicated to creation of static models for DC analysis for three specific MOS transistors in the form of netlist used in SPICE circuit simulators, using the model parameters, which have been obtained by using the optimization technique in Matlab. Validity of realized models is then verified by comparing of its characteristics, obtained from simulation in SystemVision program, with characteristics from transistor’s datasheets.
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Age effect modeling of the unipolar transistor
Soukal, Pavel ; Kolka, Zdeněk (referee) ; Petržela, Jiří (advisor)
According to non-stopable progress in wireless communications, it is desirable to integrate the RF front-end with the baseband building blocks of communication circuits into a one chip in the recent years. The CMOS technology advances, this is the reason why it becomes attractive for system-on-a-chip implementation, but CMOS device is getting shrink, so the channel electric field increasing and the hot carrier (HCI) effect becomes more significant. If the oxide is scaled down to less than 3 nm, then there is the possibility of soft or hard oxide breakdown (S/HBD) often takes place. As a result of the oxide trapping and interface generation is the long term performance drift and related reliability problems in devices and circuits. During the scaling and increasing chip power dissipation operating temperatures for device have also is increasing. Another reliability concern is the negative bias temperature instability (NBTI) caused by the interface traps under high temperature and negative gate voltage bias are arising while the operation temperature of devices is increasing. Parameter’s extraction is a very important part of the current electronic components modeling process, as it looking for the value of the unknown parameters in mathematical model, which represents physical behavior of given electronic component. The problem of parameter extraction is that fits electronic components mathematical model to a measured data set is an ill-posed problem and its solution is inherently difficult. This diploma thesis presents the parameter extraction, optimization methodology and verifies it on a case study of a MOSFET mathematical models (LEVEL1, LEVEL2 and LEVEL3) parameter extraction. The presented nonlinear method is based on the method of the least squares, which is solved with the aid of Levenberg- Marquardt’s algorithm.
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Model of MOSFET transistor in program SystemVision
Michálek, Branislav ; Brančík, Lubomír (referee) ; Kolka, Zdeněk (advisor)
This bachelor thesis deals with modeling of MOS transistor. The theoretical part of the thesis is dedicated to analysis of basic MOSFET structure and operation, basics of modeling in general, descriptions of SPICE models LEVEL1 and LEVEL3 and model parameters extraction by using the optimization technique. The realization part is dedicated to creation of static models for DC analysis for three specific MOS transistors in the form of netlist used in SPICE circuit simulators, using the model parameters, which have been obtained by using the optimization technique in Matlab. Validity of realized models is then verified by comparing of its characteristics, obtained from simulation in SystemVision program, with characteristics from transistor’s datasheets.
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Age effect modeling of the unipolar transistor
Soukal, Pavel ; Kolka, Zdeněk (referee) ; Petržela, Jiří (advisor)
According to non-stopable progress in wireless communications, it is desirable to integrate the RF front-end with the baseband building blocks of communication circuits into a one chip in the recent years. The CMOS technology advances, this is the reason why it becomes attractive for system-on-a-chip implementation, but CMOS device is getting shrink, so the channel electric field increasing and the hot carrier (HCI) effect becomes more significant. If the oxide is scaled down to less than 3 nm, then there is the possibility of soft or hard oxide breakdown (S/HBD) often takes place. As a result of the oxide trapping and interface generation is the long term performance drift and related reliability problems in devices and circuits. During the scaling and increasing chip power dissipation operating temperatures for device have also is increasing. Another reliability concern is the negative bias temperature instability (NBTI) caused by the interface traps under high temperature and negative gate voltage bias are arising while the operation temperature of devices is increasing. Parameter’s extraction is a very important part of the current electronic components modeling process, as it looking for the value of the unknown parameters in mathematical model, which represents physical behavior of given electronic component. The problem of parameter extraction is that fits electronic components mathematical model to a measured data set is an ill-posed problem and its solution is inherently difficult. This diploma thesis presents the parameter extraction, optimization methodology and verifies it on a case study of a MOSFET mathematical models (LEVEL1, LEVEL2 and LEVEL3) parameter extraction. The presented nonlinear method is based on the method of the least squares, which is solved with the aid of Levenberg- Marquardt’s algorithm.
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