|
|
Automation and control of multilayers deposition by IBS/IBAD
Pavera, Michal ; Sobota, Jaroslav (referee) ; Urbánek, Michal (advisor)
This diploma thesis deals with the automation of the deposition process by ion beam sputtering and ion beam assisted deposition. This work contains drawings of mechanical adjustments of the deposition chamber designed to control shutter and rotation of the target using stepper motors. There are presented ways to control stepper motors and troubleshoot their exact settings. Another task is to design a system for computer control of the deposition process. There are discussed ways to control the ion sources, pressure meter, flow meter and thickness meter, and their connection to a PC via RS-232 and analog-digital converters. It is also designed control program in LabVIEW, which allow automated multilayer deposition. Last part of the thesis deals with testing automatic deposition and results are commented.
|
|
|
Morphology study of ultra thin layers by XPS analysis of multiple peaks of a single element
Pokorný, David ; Šik, Ondřej (referee) ; Polčák, Josef (advisor)
This diploma thesis deals with methodology of thin film thickness determination using X-ray radiation of silver anode which provides radiation with energy of 2984,3 eV. This energy is twice as high as the standard aluminium radiation which allows a measurement of new photoelectron lines with higher bonding energy and it also provides thanks to the higher photoelectron energy greater information depth. In order to get the right results it was necessary to calibrate the spectrometer Kratos Axis Supra in the silver anode mode first and found out the form of the transmission function. The determination of the thickness of the thin layer was demonstrated by the comparation of the ratio of different photoelectron lines intensities with the theoretical model. For that purpose was specifically used the Si 1s and Si 2p peak bound in the substrate in the Si-Si bonding or in the thin oxid layer in the Si-O bonding. The results show that for thin SiO2/Si film thickness determination is the best to use the intensity ratio of only one photoelectron line. A silver anode however provides greater information depth.
|
|
|
The deposition of thin films by the ion sputtering IBS/IBAD
Hudeček, Jan ; Pavera, Michal (referee) ; Dvořák, Petr (advisor)
The submitted bachelor’s thesis are dealed with concept and design of holder of new palette, which is determine for deposition equipment, which belongs to institue of physical engineering and which is called as Kaufmann. Introductory chapters of bachelor’s thesis deals about possibilities of production of thin films, ways of growth of thin films and introduction to vakuum physics. Next chapter is given to current deposition and current deposition equipment Kaufmann. In the next chapter are descriptions of construct solution of holder of new palette and construct solution of palette. The last chapter is given to calibration and optimalization of deposition with new palette.
|
|
|
Morphology study of ultra thin layers by XPS analysis of multiple peaks of a single element
Pokorný, David ; Šik, Ondřej (referee) ; Polčák, Josef (advisor)
This diploma thesis deals with methodology of thin film thickness determination using X-ray radiation of silver anode which provides radiation with energy of 2984,3 eV. This energy is twice as high as the standard aluminium radiation which allows a measurement of new photoelectron lines with higher bonding energy and it also provides thanks to the higher photoelectron energy greater information depth. In order to get the right results it was necessary to calibrate the spectrometer Kratos Axis Supra in the silver anode mode first and found out the form of the transmission function. The determination of the thickness of the thin layer was demonstrated by the comparation of the ratio of different photoelectron lines intensities with the theoretical model. For that purpose was specifically used the Si 1s and Si 2p peak bound in the substrate in the Si-Si bonding or in the thin oxid layer in the Si-O bonding. The results show that for thin SiO2/Si film thickness determination is the best to use the intensity ratio of only one photoelectron line. A silver anode however provides greater information depth.
|
|
|
Automation and control of multilayers deposition by IBS/IBAD
Pavera, Michal ; Sobota, Jaroslav (referee) ; Urbánek, Michal (advisor)
This diploma thesis deals with the automation of the deposition process by ion beam sputtering and ion beam assisted deposition. This work contains drawings of mechanical adjustments of the deposition chamber designed to control shutter and rotation of the target using stepper motors. There are presented ways to control stepper motors and troubleshoot their exact settings. Another task is to design a system for computer control of the deposition process. There are discussed ways to control the ion sources, pressure meter, flow meter and thickness meter, and their connection to a PC via RS-232 and analog-digital converters. It is also designed control program in LabVIEW, which allow automated multilayer deposition. Last part of the thesis deals with testing automatic deposition and results are commented.
|
|
|
The deposition of thin films by the ion sputtering IBS/IBAD
Hudeček, Jan ; Pavera, Michal (referee) ; Dvořák, Petr (advisor)
The submitted bachelor’s thesis are dealed with concept and design of holder of new palette, which is determine for deposition equipment, which belongs to institue of physical engineering and which is called as Kaufmann. Introductory chapters of bachelor’s thesis deals about possibilities of production of thin films, ways of growth of thin films and introduction to vakuum physics. Next chapter is given to current deposition and current deposition equipment Kaufmann. In the next chapter are descriptions of construct solution of holder of new palette and construct solution of palette. The last chapter is given to calibration and optimalization of deposition with new palette.
|
guest ::
