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National Repository of Grey Literature 3 records found  Search took 0.01 seconds. 
Study of Radiation Damage in Silicon Strip Detector for ATLAS ITk
 Zatočilová, Iveta ; Mikeštíková, Marcela (advisor) ; Marčišovská, Mária (referee)
Ionizing radiation causes bulk and surface damages in silicon detectors. The significant bulk damage is caused also by neutrons. Those damages in- fluence the detection performance of silicon strip detectors. The main purpose of this thesis is to study the effects of radiation damage in silicon strip sen- sors by performing electrical tests on them. Tested silicon strip sensors were designed for the replacement of the current Inner Detector of the ATLAS ex- periment by a new all-silicon Inner Tracker. This replacement is needed because of the upgrade of the Large Hadron Collider (LHC) into the High-Luminosity LHC. 1
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Study of Radiation Damage in Silicon Strip Detector for ATLAS ITk
 Zatočilová, Iveta ; Mikeštíková, Marcela (advisor) ; Marčišovská, Mária (referee)
Ionizing radiation causes bulk and surface damages in silicon detectors. The significant bulk damage is caused also by neutrons. Those damages in- fluence the detection performance of silicon strip detectors. The main purpose of this thesis is to study the effects of radiation damage in silicon strip sen- sors by performing electrical tests on them. Tested silicon strip sensors were designed for the replacement of the current Inner Detector of the ATLAS ex- periment by a new all-silicon Inner Tracker. This replacement is needed because of the upgrade of the Large Hadron Collider (LHC) into the High-Luminosity LHC. 1
Detailed record
Study of Detection Performance of Silicon Strip Sensors for ATLAS ITk Upgrade Project
 Latoňová, Věra ; Mikeštíková, Marcela (advisor) ; Vorobel, Vít (referee)
The upgrade of the Large Hadron Collider into the High Luminosity Large Hadron Collider requires a complete replacement of the ATLAS Inner Detector by a new all-silicon Inner Tracker. For this reason a new micro-strip sensor type n+ -in-p was developed. These sensors are expected to have many advantages, such as higher radiation resistance, the ability to operate even if not fully de- pleted and faster response. The main purpose of this thesis is to study and evaluate the detection performance and radiation hardness of the n+ -in-p sen- sor type with the help of electrical characteristics performed on the delivered sensors. The obtained results are compared to the Market Survey Step-2 require- ments and in the case of the sensors designed for the ATLAS Inner Tracker also to the corresponding Technical Specification document. 1
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