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X-ray investigation of defects in graded SiGe/Si thin layers
Endres, Jan ; Daniš, Stanislav (advisor) ; Holý, Václav (referee)
The goal of presented work is a study of defects in graded Si1xGex/Si thin layers. Misfit dislocations are dominant type of defects in this kind of layers. Diffuse scattering of radiation, which is caused by the presence of defects, was measured with high-resolution diffractometer. Misfit dislocations arrangement in the layers was determined from measured reciprocal space maps. Misfit dislocations distribution is discussed within the scope of two models. Equilibrium one, which is based on energy minimization, and kinetic one, which considers thermally activated movement of dislocations. Measured reciprocal space maps were compared with simulations, which were realized via kinematic theory of X-ray radiation scattering.
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X-ray investigation of defects in graded SiGe/Si thin layers
Endres, Jan ; Daniš, Stanislav (advisor) ; Holý, Václav (referee)
The goal of presented work is a study of defects in graded Si1xGex/Si thin layers. Misfit dislocations are dominant type of defects in this kind of layers. Diffuse scattering of radiation, which is caused by the presence of defects, was measured with high-resolution diffractometer. Misfit dislocations arrangement in the layers was determined from measured reciprocal space maps. Misfit dislocations distribution is discussed within the scope of two models. Equilibrium one, which is based on energy minimization, and kinetic one, which considers thermally activated movement of dislocations. Measured reciprocal space maps were compared with simulations, which were realized via kinematic theory of X-ray radiation scattering.
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